He, Mingze, Lindsay, Lucas, Beechem, Thomas E., Folland, Thomas, Matson, Joseph, Watanabe, Kenji, Zavalin, Andrey, Ueda, Akira, Collins, Warren. E., Taniguchi, Takashi, and Caldwell, Joshua D. Phonon engineering of boron nitride via isotopic enrichment. Retrieved from https://par.nsf.gov/biblio/10331466. Journal of Materials Research 36.21 Web. doi:10.1557/s43578-021-00426-9.

He, Mingze, Lindsay, Lucas, Beechem, Thomas E., Folland, Thomas, Matson, Joseph, Watanabe, Kenji, Zavalin, Andrey, Ueda, Akira, Collins, Warren. E., Taniguchi, Takashi, & Caldwell, Joshua D. Phonon engineering of boron nitride via isotopic enrichment. Journal of Materials Research, 36 (21). Retrieved from https://par.nsf.gov/biblio/10331466. https://doi.org/10.1557/s43578-021-00426-9

He, Mingze, Lindsay, Lucas, Beechem, Thomas E., Folland, Thomas, Matson, Joseph, Watanabe, Kenji, Zavalin, Andrey, Ueda, Akira, Collins, Warren. E., Taniguchi, Takashi, and Caldwell, Joshua D. "Phonon engineering of boron nitride via isotopic enrichment". Journal of Materials Research 36 (21). Country unknown/Code not available. https://doi.org/10.1557/s43578-021-00426-9. https://par.nsf.gov/biblio/10331466.

@article{osti_10331466,
place = {Country unknown/Code not available}, title = {Phonon engineering of boron nitride via isotopic enrichment}, url = {https://par.nsf.gov/biblio/10331466}, DOI = {10.1557/s43578-021-00426-9}, abstractNote = {}, journal = {Journal of Materials Research}, volume = {36}, number = {21}, author = {He, Mingze and Lindsay, Lucas and Beechem, Thomas E. and Folland, Thomas and Matson, Joseph and Watanabe, Kenji and Zavalin, Andrey and Ueda, Akira and Collins, Warren. E. and Taniguchi, Takashi and Caldwell, Joshua D.}, }