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This content will become publicly available on December 1, 2023

Title: High-mobility semiconducting polymers with different spin ground states
Abstract Organic semiconductors with high-spin ground states are fascinating because they could enable fundamental understanding on the spin-related phenomenon in light element and provide opportunities for organic magnetic and quantum materials. Although high-spin ground states have been observed in some quinoidal type small molecules or doped organic semiconductors, semiconducting polymers with high-spin at their neutral ground state are rarely reported. Here we report three high-mobility semiconducting polymers with different spin ground states. We show that polymer building blocks with small singlet-triplet energy gap (Δ E S-T ) could enable small Δ E S-T gap and increase the diradical character in copolymers. We demonstrate that the electronic structure, spin density, and solid-state interchain interactions in the high-spin polymers are crucial for their ground states. Polymers with a triplet ground state ( S  = 1) could exhibit doublet ( S  = 1/2) behavior due to different spin distributions and solid-state interchain spin-spin interactions. Besides, these polymers showed outstanding charge transport properties with high hole/electron mobilities and can be both n- and p-doped with superior conductivities. Our results demonstrate a rational approach to obtain high-mobility semiconducting polymers with different spin ground states.
Authors:
; ; ; ; ; ; ; ; ;
Award ID(s):
1757220
Publication Date:
NSF-PAR ID:
10335928
Journal Name:
Nature Communications
Volume:
13
Issue:
1
ISSN:
2041-1723
Sponsoring Org:
National Science Foundation
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