Abuzaid, Hattan, Cheng, Zhihui, Li, Guoqing, Cao, Linyou, and Franklin, Aaron D. Unanticipated Polarity Shift in Edge-Contacted Tungsten-Based 2D Transition Metal Dichalcogenide Transistors. Retrieved from https://par.nsf.gov/biblio/10336462. IEEE Electron Device Letters 42.10 Web. doi:10.1109/LED.2021.3106286.

Abuzaid, Hattan, Cheng, Zhihui, Li, Guoqing, Cao, Linyou, & Franklin, Aaron D. Unanticipated Polarity Shift in Edge-Contacted Tungsten-Based 2D Transition Metal Dichalcogenide Transistors. IEEE Electron Device Letters, 42 (10). Retrieved from https://par.nsf.gov/biblio/10336462. https://doi.org/10.1109/LED.2021.3106286

Abuzaid, Hattan, Cheng, Zhihui, Li, Guoqing, Cao, Linyou, and Franklin, Aaron D. "Unanticipated Polarity Shift in Edge-Contacted Tungsten-Based 2D Transition Metal Dichalcogenide Transistors". IEEE Electron Device Letters 42 (10). Country unknown/Code not available. https://doi.org/10.1109/LED.2021.3106286. https://par.nsf.gov/biblio/10336462.

@article{osti_10336462,
place = {Country unknown/Code not available}, title = {Unanticipated Polarity Shift in Edge-Contacted Tungsten-Based 2D Transition Metal Dichalcogenide Transistors}, url = {https://par.nsf.gov/biblio/10336462}, DOI = {10.1109/LED.2021.3106286}, abstractNote = {}, journal = {IEEE Electron Device Letters}, volume = {42}, number = {10}, author = {Abuzaid, Hattan and Cheng, Zhihui and Li, Guoqing and Cao, Linyou and Franklin, Aaron D.}, }