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1. Small‐Band‐Gap Halide Double Perovskites

   https://doi.org/10.1002/anie.201807421  

   Slavney, Adam H. ; Leppert, Linn ; Saldivar Valdes, Abraham ; Bartesaghi, Davide ; Savenije, Tom J. ; Neaton, Jeffrey B. ; Karunadasa, Hemamala I. ( August 2018 , Angewandte Chemie International Edition)

   Despite their compositional versatility, most halide double perovskites feature large band gaps. Herein, we describe a strategy for achieving small band gaps in this family of materials. The new double perovskites Cs₂AgTlX₆(X=Cl (1) and Br (2)) have direct band gaps of 2.0 and 0.95 eV, respectively, which are approximately 1 eV lower than those of analogous perovskites. To our knowledge, compound2displays the lowest band gap for any known halide perovskite. Unlike in A^IB^IIX₃perovskites, the band‐gap transition in A^I₂BB′X₆double perovskites can show substantial metal‐to‐metal charge‐transfer character. This band‐edge orbital composition is used to achieve small band gaps through the selection of energetically aligned B‐ and B′‐site metal frontier orbitals. Calculations reveal a shallow, symmetry‐forbidden region at the band edges for1, which results in long (μs) microwave conductivity lifetimes. We further describe a facile self‐doping reaction in2through Br₂loss at ambient conditions.

    

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2. Small‐Band‐Gap Halide Double Perovskites

   https://doi.org/10.1002/ange.201807421  

   Slavney, Adam H. ; Leppert, Linn ; Saldivar Valdes, Abraham ; Bartesaghi, Davide ; Savenije, Tom J. ; Neaton, Jeffrey B. ; Karunadasa, Hemamala I. ( August 2018 , Angewandte Chemie)

   Despite their compositional versatility, most halide double perovskites feature large band gaps. Herein, we describe a strategy for achieving small band gaps in this family of materials. The new double perovskites Cs₂AgTlX₆(X=Cl (1) and Br (2)) have direct band gaps of 2.0 and 0.95 eV, respectively, which are approximately 1 eV lower than those of analogous perovskites. To our knowledge, compound2displays the lowest band gap for any known halide perovskite. Unlike in A^IB^IIX₃perovskites, the band‐gap transition in A^I₂BB′X₆double perovskites can show substantial metal‐to‐metal charge‐transfer character. This band‐edge orbital composition is used to achieve small band gaps through the selection of energetically aligned B‐ and B′‐site metal frontier orbitals. Calculations reveal a shallow, symmetry‐forbidden region at the band edges for1, which results in long (μs) microwave conductivity lifetimes. We further describe a facile self‐doping reaction in2through Br₂loss at ambient conditions.

    

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3. Tin Oxynitride-Based Ferroelectric Semiconductors for Solar Energy Conversion Applications

   https://doi.org/10.1021/acs.chemmater.0c02439  

   Hartman, Steven T. ; Thind, Arashdeep S. ; Mishra, Rohan ( November 2020 , Chemistry of Materials)

   null (Ed.)

   Lead halide perovskites have emerged as a promising class of semiconductors; however, they suffer from issues related to lead toxicity and instability. We report results of a first-principles-based design of heavy-metal-based oxynitrides as alternatives to lead halide perovskites. We have used density functional theory calculations to search a vast composition space of ABO2N and ABON2 compounds, where B is a p-block cation and A is an alkaline, alkali-earth, rare-earth, or transition metal cation, and identify 10 new ABO2N oxynitride semiconductors that we expect to be formable. Specifically, we discover a new family of ferroelectric semiconductors with A3+SnO2N stoichiometry (A = Y, Eu, La, In, and Sc) in the LuMnO3-type structure, which combine the strong bonding of metal oxides with the low carrier effective mass and small, tunable band gaps of the lead halide perovskites. These tin oxynitrides have predicted direct band gaps ranging from 1.6 to 3.3 eV and a sizable electric polarization up to 17 μC/cm2, which is predicted to be switchable by an external electric field through a nonpolar phase. With their unique combination of polarization, low carrier effective mass, and band gaps spanning the entire visible spectrum, we expect ASnO2N ferroelectric semiconductors will find useful applications as photovoltaics and photocatalysts as well as for optoelectronics. 

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4. Nanocube Superlattices of Cesium Lead Bromide Perovskites and Pressure‐Induced Phase Transformations at Atomic and Mesoscale Levels

   https://doi.org/10.1002/adma.201606666  

   Nagaoka, Yasutaka ; Hills‐Kimball, Katie ; Tan, Rui ; Li, Ruipeng ; Wang, Zhongwu ; Chen, Ou ( March 2017 , Advanced Materials)

   Lead halide perovskites are promising materials for a range of applications owing to their unique crystal structure and optoelectronic properties. Understanding the relationship between the atomic/mesostructures and the associated properties of perovskite materials is crucial to their application performances. Herein, the detailed pressure processing of CsPbBr₃perovskite nanocube superlattices (NC‐SLs) is reported for the first time. By using in situ synchrotron‐based small/wide angle X‐ray scattering and photoluminescence (PL) probes, the NC‐SL structural transformations are correlated at both atomic and mesoscale levels with the band‐gap evolution through a pressure cycle of 0 ↔ 17.5 GPa. After the pressurization, the individual CsPbBr₃NCs fuse into 2D nanoplatelets (NPLs) with a uniform thickness. The pressure‐synthesized perovskite NPLs exhibit a single cubic crystal structure, a 1.6‐fold enhanced photoluminescence quantum yield, and a longer emission lifetime than the starting NCs. This study demonstrates that pressure processing can serve as a novel approach for the rapid conversion of lead halide perovskites into structures with enhanced properties.

    

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5. Mosaic Cu I −Cu II −In III 2D Perovskites: Pressure‐Dependence of the Intervalence Charge Transfer and a Mechanochemical Alloying Method

   https://doi.org/10.1002/anie.202300957  

   Li, Jiayi ; Matheu, Roc ; Ke, Feng ; Liu, Zhenxian ; Lin, Yu ; Karunadasa, Hemamala I. ( April 2023 , Angewandte Chemie International Edition)

   The perovskite (BA)₄[Cu^II(Cu^IIn^III)_0.5]Cl₈(1_BA; BA⁺=butylammonium) allows us to study the high‐pressure structural, optical, and transport properties of a mixed‐valence 2D perovskite. Compressing1_BAreduces the onset energy of Cu^I/IIintervalence charge transfer from 1.2 eV at ambient pressure to 0.2 eV at 21 GPa. The electronic conductivity of1_BAincreases by 4 orders of magnitude upon compression to 20 GPa, when the activation energy for conduction decreases to 0.16 eV. In contrast, Cu^IIperovskites achieve similar conductivity at ≈50 GPa. The solution‐state synthesis of these perovskites is complicated, with more undesirable side products likely from the precursor mixtures containing three different metal ions. To circumvent this problem, we demonstrate an efficient mechanochemical synthesis to expand this family of halide perovskites with complex composition by simply pulverizing together powders of 2D Cu^IIsingle perovskites and Cu^IIn^IIIdouble perovskites.

    

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