Al-Mamun, Nahid Sultan, Wetherington, Maxwell, Wolfe, Douglas E., Haque, Aman, Ren, Fan, and Pearton, Stephen. Local strain modification effects on global properties of AlGaN/GaN high electron mobility transistors. Retrieved from https://par.nsf.gov/biblio/10338733. Microelectronic Engineering 262.C Web. doi:10.1016/j.mee.2022.111836.

Al-Mamun, Nahid Sultan, Wetherington, Maxwell, Wolfe, Douglas E., Haque, Aman, Ren, Fan, & Pearton, Stephen. Local strain modification effects on global properties of AlGaN/GaN high electron mobility transistors. Microelectronic Engineering, 262 (C). Retrieved from https://par.nsf.gov/biblio/10338733. https://doi.org/10.1016/j.mee.2022.111836

Al-Mamun, Nahid Sultan, Wetherington, Maxwell, Wolfe, Douglas E., Haque, Aman, Ren, Fan, and Pearton, Stephen. "Local strain modification effects on global properties of AlGaN/GaN high electron mobility transistors". Microelectronic Engineering 262 (C). Country unknown/Code not available. https://doi.org/10.1016/j.mee.2022.111836. https://par.nsf.gov/biblio/10338733.

@article{osti_10338733,
place = {Country unknown/Code not available}, title = {Local strain modification effects on global properties of AlGaN/GaN high electron mobility transistors}, url = {https://par.nsf.gov/biblio/10338733}, DOI = {10.1016/j.mee.2022.111836}, abstractNote = {}, journal = {Microelectronic Engineering}, volume = {262}, number = {C}, author = {Al-Mamun, Nahid Sultan and Wetherington, Maxwell and Wolfe, Douglas E. and Haque, Aman and Ren, Fan and Pearton, Stephen}, }