Local strain modification effects on global properties of AlGaN/GaN high electron mobility transistors
- Award ID(s):
- 1856662
- NSF-PAR ID:
- 10338733
- Date Published:
- Journal Name:
- Microelectronic Engineering
- Volume:
- 262
- Issue:
- C
- ISSN:
- 0167-9317
- Page Range / eLocation ID:
- 111836
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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