This report is on the observation and analysis of nonlinear magnetoelectric effects (NLME) for in-plane currents perpendicularly to the hexagonal axis in single crystals and liquid phase epitaxy grown thin films of barium hexaferrite. Measurements involved tuning of ferromagnetic resonance (FMR) at 56–58 GHz in the multidomain and single domain states in the ferrite by applying a current. Data on the shift in the resonance frequency with input electric power was utilized to estimate the variations in the magnetic parameter that showed a linear dependence on the input electric power. The NLME tensor coefficients were determined form the estimated changes in the magnetization and uniaxial anisotropy field. The estimated NLME coefficients for in-plane currents are shown to be much higher than for currents flowing along the hexagonal axis. Although the frequency shift of FMR was higher for the single domain resonance, the multi-domain configuration is preferable for device applications since it eliminates the need for a large bias magnetic field. Thus, multidomain resonance with current in the basal plane is favorable for use in electrically tunable miniature, ferrite microwave signal processing devices requiring low operating power.
Numerical simulations for ferromagnetic resonance of nano-size island structures probed by radio-frequency scanning tunneling microscopy
Abstract We numerically calculated ferromagnetic resonance (FMR) spectra taken on a single-domain nano-size ferromagnetic island structure in the configuration of radio-frequency (RF) scanning tunneling microscopy, where RF electromagnetic waves are introduced into the tunneling gap through the probe tip. In this scheme, near-field in-plane azimuthal RF magnetic field induces FMR of an out-of-plane magnetized island situated below the tip under the external out-of-plane magnetic field. The amount of the magnetization of the island is effectively reduced by the resonance and the reduction can be detected from the spin-polarized tunneling conductance. From the calculated spectra we found that the FMR signal becomes larger with a smaller tip-sample distance and a sharper tip. It is also revealed that the azimuthal RF magnetic field exerted on the island and therefore the FMR signal are enhanced when a tip is located near the edge of the island.
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- NSF-PAR ID:
- 10342200
- Date Published:
- Journal Name:
- Japanese Journal of Applied Physics
- Volume:
- 61
- Issue:
- 2
- ISSN:
- 0021-4922
- Page Range / eLocation ID:
- 025001
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract This work focuses on the nature of magnetic anisotropy in 2.5–16 micron thick films of nickel ferrite (NFO) grown by liquid phase epitaxy (LPE). The technique, ideal for rapid growth of epitaxial oxide films, was utilized for films on (100) and (110) substrates of magnesium gallate (MGO). The motivation was to investigate the dependence of the growth induced anisotropy field on film thickness since submicron films of NFO were reported to show a very high anisotropy. The films grown at 850–875 C and subsequently annealed at 1000 C were found to be epitaxial, with the out-of-plane lattice constant showing unanticipated decrease with increasing film thickness and the estimated in-plane lattice constant increasing with the film thickness. The uniaxial anisotropy field H σ , estimated from X-ray diffraction data, ranged from 2.8–7.7 kOe with the films on (100) MGO having a higher H σ value than for the films on (110) MGO. Ferromagnetic resonance (FMR) measurements for in-plane and out-of-plane static magnetic field were utilized to determine both the magnetocrystalline the anisotropy field H 4 and the uniaxial anisotropy field H a . Values of H 4 range from −0.24 to −0.86 kOe. The uniaxial anisotropy field H a was an order of magnitude smaller than H σ and it decreased with increasing film thickness for NFO films on (100) MGO, but H a increased with film thickness for films on (110) MGO substrates. These observations indicate that the origin of the induced anisotropy could be attributed to several factors including (i) strain due to mismatch in the film-substrate lattice constants, (ii) possible variations in the bond lengths and bond angles in NFO during the growth process, and (iii) the strain arising from mismatch in the thermal expansion coefficients of the film and the substrate due to the high growth and annealing temperatures involved in the LPE technique. The LPE films of NFO on MGO substrates studied in this work are of interest for use in high frequency devices.more » « less
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Abstract Giant spin-orbit torque (SOT) from topological insulators (TIs) provides an energy efficient writing method for magnetic memory, which, however, is still premature for practical applications due to the challenge of the integration with magnetic tunnel junctions (MTJs). Here, we demonstrate a functional TI-MTJ device that could become the core element of the future energy-efficient spintronic devices, such as SOT-based magnetic random-access memory (SOT-MRAM). The state-of-the-art tunneling magnetoresistance (TMR) ratio of 102% and the ultralow switching current density of 1.2 × 105 A cm−2have been simultaneously achieved in the TI-MTJ device at room temperature, laying down the foundation for TI-driven SOT-MRAM. The charge-spin conversion efficiency
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.35848/1347-4065/ac4556
