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Title: Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors
Award ID(s):
1904580
NSF-PAR ID:
10342915
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; more » ; ; ; ; ; ; ; ; ; ; ; ; « less
Date Published:
Journal Name:
IEEE International Electron Device Meeting (IEDM)
Page Range / eLocation ID:
37.2.1 to 37.2.4
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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