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This content will become publicly available on December 11, 2022

Title: Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors
Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; more » ; ; ; ; ; ; ; ; ; ; ; ; « less
Award ID(s):
1904580
Publication Date:
NSF-PAR ID:
10342915
Journal Name:
IEEE International Electron Device Meeting (IEDM)
Page Range or eLocation-ID:
37.2.1 to 37.2.4
Sponsoring Org:
National Science Foundation
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