Lin, Y., Shen, P.-C., Su, C., Chou, A.-S., Wu, T., Cheng, C.-C., Park, J.-H., Chiu, M.-H., Lu, A.-Y., Tang, H.-L., Tavakoli, M. M., Pitner, G., Ji, X., McGahan, C., Wang, X., Cai, Z., Mao, N., Wang, J., Wang, Y., Tisdale, W., Ling, X., Aidala, K. E., Tung, V., Li, J., Zettl, A., Wu, C.-I., Guo, Jing, Wang, H., Bokor, J., Palacios, T., Li, L.-J., and Kong, J. Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors. Retrieved from https://par.nsf.gov/biblio/10342915. IEEE International Electron Device Meeting (IEDM) . Web. doi:10.1109/IEDM19574.2021.9720668.

Lin, Y., Shen, P.-C., Su, C., Chou, A.-S., Wu, T., Cheng, C.-C., Park, J.-H., Chiu, M.-H., Lu, A.-Y., Tang, H.-L., Tavakoli, M. M., Pitner, G., Ji, X., McGahan, C., Wang, X., Cai, Z., Mao, N., Wang, J., Wang, Y., Tisdale, W., Ling, X., Aidala, K. E., Tung, V., Li, J., Zettl, A., Wu, C.-I., Guo, Jing, Wang, H., Bokor, J., Palacios, T., Li, L.-J., & Kong, J. Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors. IEEE International Electron Device Meeting (IEDM), (). Retrieved from https://par.nsf.gov/biblio/10342915. https://doi.org/10.1109/IEDM19574.2021.9720668

Lin, Y., Shen, P.-C., Su, C., Chou, A.-S., Wu, T., Cheng, C.-C., Park, J.-H., Chiu, M.-H., Lu, A.-Y., Tang, H.-L., Tavakoli, M. M., Pitner, G., Ji, X., McGahan, C., Wang, X., Cai, Z., Mao, N., Wang, J., Wang, Y., Tisdale, W., Ling, X., Aidala, K. E., Tung, V., Li, J., Zettl, A., Wu, C.-I., Guo, Jing, Wang, H., Bokor, J., Palacios, T., Li, L.-J., and Kong, J. "Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors". IEEE International Electron Device Meeting (IEDM) (). Country unknown/Code not available. https://doi.org/10.1109/IEDM19574.2021.9720668. https://par.nsf.gov/biblio/10342915.

@article{osti_10342915,
place = {Country unknown/Code not available}, title = {Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors}, url = {https://par.nsf.gov/biblio/10342915}, DOI = {10.1109/IEDM19574.2021.9720668}, abstractNote = {}, journal = {IEEE International Electron Device Meeting (IEDM)}, author = {Lin, Y. and Shen, P.-C. and Su, C. and Chou, A.-S. and Wu, T. and Cheng, C.-C. and Park, J.-H. and Chiu, M.-H. and Lu, A.-Y. and Tang, H.-L. and Tavakoli, M. M. and Pitner, G. and Ji, X. and McGahan, C. and Wang, X. and Cai, Z. and Mao, N. and Wang, J. and Wang, Y. and Tisdale, W. and Ling, X. and Aidala, K. E. and Tung, V. and Li, J. and Zettl, A. and Wu, C.-I. and Guo, Jing and Wang, H. and Bokor, J. and Palacios, T. and Li, L.-J. and Kong, J.}, }