@article{osti_10342915,
place = {Country unknown/Code not available},
title = {Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors},
url = {https://par.nsf.gov/biblio/10342915},
DOI = {10.1109/IEDM19574.2021.9720668},
abstractNote = {},
journal = {IEEE International Electron Device Meeting (IEDM)},
author = {Lin, Y. and Shen, P.-C. and Su, C. and Chou, A.-S. and Wu, T. and Cheng, C.-C. and Park, J.-H. and Chiu, M.-H. and Lu, A.-Y. and Tang, H.-L. and Tavakoli, M. M. and Pitner, G. and Ji, X. and McGahan, C. and Wang, X. and Cai, Z. and Mao, N. and Wang, J. and Wang, Y. and Tisdale, W. and Ling, X. and Aidala, K. E. and Tung, V. and Li, J. and Zettl, A. and Wu, C.-I. and Guo, Jing and Wang, H. and Bokor, J. and Palacios, T. and Li, L.-J. and Kong, J.},
}
Warning: Leaving National Science Foundation Website
You are now leaving the National Science Foundation website to go to a non-government website.
Website:
NSF takes no responsibility for and exercises no control over the views expressed or the accuracy of
the information contained on this site. Also be aware that NSF's privacy policy does not apply to this site.