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Title: WIDE-BANDGAP SEMICONDUCTORS Gallium Nitride, GaN - Silicon Carbide, SiC
About the LASER-TEC Laser and Fiber Optics Educational Series This series was created for use in engineering technology programs such as electronics, photonics, laser electro-optics, etc. This series of publications has three goals in mind: 1) to create educational materials for areas of laser electro-optics technology in which no materials exist, 2) to work with industry to use, adapt, and enhance available industry-created materials, 3) to make these materials available at no cost which, in turn, would generate more accessible education to everyone (including technicians). The Laser and Fiber Optics Educational Series is available for free online at www.laser-tec.org. About Wide-Bandgap Semiconductors New semiconductors based on silicon carbide (SiC) and gallium nitride (GaN) are now commercially available, which has been instrumental in removing obstacles that legacy silicon bipolar and metal-oxide-semiconductor field-effect transistor (MOSFET) devices could not overcome. These new devices have superior power-handling abilities due to their better thermal properties, higher switching frequencies, and lower conduction losses. Collectively, these properties make wide-bandgap devices the preferred technology for high-power conversion applications with efficiencies approaching 99%. For this reason, this new technology must be introduced to existing curricula, preparing engineers and technicians to tackle today’s and tomorrow’s power electronics challenges. This module is intended for use in technical programs after coverage of basic semiconductor theory and discrete devices such as silicon diodes, bipolar junction, field effect, and MOSFET transistors.  more » « less
Award ID(s):
2000166
PAR ID:
10343252
Author(s) / Creator(s):
Date Published:
Journal Name:
WIDE-BANDGAP SEMICONDUCTORS
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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