MOCVD growth of (010) β-(AlxGa1−x)2O3 thin films (Journal Article) | NSF PAGES

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Citation Details

MOCVD growth of (010) β-(AlxGa1−x)2O3 thin films

Authors:: Bhuiyan, A F; Feng, Zixuan; Meng, Lingyu; Zhao, Hongping

Award ID(s):: 2019753 1810041

Publication Date:: 2021-12-14

NSF-PAR ID:: 10343500

Journal Name:: Journal of Materials Research

Volume:: 36

Issue:: 23

Page Range or eLocation-ID:: 4804 to 4815

ISSN:: 0884-2914

Sponsoring Org:: National Science Foundation

Free Publicly Accessible Full Text
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Publisher's Version of Record
https://doi.org/10.1557/s43578-021-00354-8