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Title: Transient characteristics of β-Ga 2 O 3 nanomembrane Schottky barrier diodes on various substrates
Abstract In this paper, transient delayed rise and fall times for beta gallium oxide ( β -Ga 2 O 3 ) nanomembrane (NM) Schottky barrier diodes (SBDs) formed on four different substrates (diamond, Si, sapphire, and polyimide) were measured using a sub-micron second resolution time-resolved electrical measurement system under different temperature conditions. The devices exhibited noticeably less-delayed turn on/turn off transient time when β -Ga 2 O 3 NM SBDs were built on a high thermal conductive (high- k ) substrate. Furthermore, a relationship between the β -Ga 2 O 3 NM thicknesses under different temperature conditions and their transient characteristics were systematically investigated and verified it using a multiphysics simulator. Overall, our results revealed the impact of various substrates with different thermal properties and different β -Ga 2 O 3 NM thicknesses on the performance of β -Ga 2 O 3 NM-based devices. Thus, the high- k substrate integration strategy will help design future β -Ga 2 O 3 -based devices by maximizing heat dissipation from the β -Ga 2 O 3 layer.  more » « less
Award ID(s):
1809077
NSF-PAR ID:
10346390
Author(s) / Creator(s):
;
Date Published:
Journal Name:
Journal of Physics D: Applied Physics
Volume:
55
Issue:
39
ISSN:
0022-3727
Page Range / eLocation ID:
395101
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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