Yun, Yu, Buragohain, Pratyush, Li, Ming, Ahmadi, Zahra, Zhang, Yizhi, Li, Xin, Wang, Haohan, Li, Jing, Lu, Ping, Tao, Lingling, Wang, Haiyan, Shield, Jeffrey E., Tsymbal, Evgeny Y., Gruverman, Alexei, and Xu, Xiaoshan. Intrinsic ferroelectricity in Y-doped HfO2 thin films. Retrieved from https://par.nsf.gov/biblio/10352757. Nature Materials 21.8 Web. doi:10.1038/s41563-022-01282-6.

Yun, Yu, Buragohain, Pratyush, Li, Ming, Ahmadi, Zahra, Zhang, Yizhi, Li, Xin, Wang, Haohan, Li, Jing, Lu, Ping, Tao, Lingling, Wang, Haiyan, Shield, Jeffrey E., Tsymbal, Evgeny Y., Gruverman, Alexei, & Xu, Xiaoshan. Intrinsic ferroelectricity in Y-doped HfO2 thin films. Nature Materials, 21 (8). Retrieved from https://par.nsf.gov/biblio/10352757. https://doi.org/10.1038/s41563-022-01282-6

Yun, Yu, Buragohain, Pratyush, Li, Ming, Ahmadi, Zahra, Zhang, Yizhi, Li, Xin, Wang, Haohan, Li, Jing, Lu, Ping, Tao, Lingling, Wang, Haiyan, Shield, Jeffrey E., Tsymbal, Evgeny Y., Gruverman, Alexei, and Xu, Xiaoshan. "Intrinsic ferroelectricity in Y-doped HfO2 thin films". Nature Materials 21 (8). Country unknown/Code not available. https://doi.org/10.1038/s41563-022-01282-6. https://par.nsf.gov/biblio/10352757.

@article{osti_10352757,
place = {Country unknown/Code not available}, title = {Intrinsic ferroelectricity in Y-doped HfO2 thin films}, url = {https://par.nsf.gov/biblio/10352757}, DOI = {10.1038/s41563-022-01282-6}, abstractNote = {}, journal = {Nature Materials}, volume = {21}, number = {8}, author = {Yun, Yu and Buragohain, Pratyush and Li, Ming and Ahmadi, Zahra and Zhang, Yizhi and Li, Xin and Wang, Haohan and Li, Jing and Lu, Ping and Tao, Lingling and Wang, Haiyan and Shield, Jeffrey E. and Tsymbal, Evgeny Y. and Gruverman, Alexei and Xu, Xiaoshan}, }