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Title: Phonon Lifetimes in Boron‐Isotope‐Enriched Graphene‐ Hexagonal Boron Nitride Devices
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Award ID(s):
1919486 1912455
NSF-PAR ID:
10367933
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  ;  
Publisher / Repository:
Wiley Blackwell (John Wiley & Sons)
Date Published:
Journal Name:
physica status solidi (RRL) – Rapid Research Letters
Volume:
16
Issue:
6
ISSN:
1862-6254
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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  1. Abstract

    Hexagonal boron nitride (h-BN) has been predicted to exhibit an in-plane thermal conductivity as high as ~ 550 W m−1K−1at room temperature, making it a promising thermal management material. However, current experimental results (220–420 W m−1K−1) have been well below the prediction. Here, we report on the modulation of h-BN thermal conductivity by controlling the B isotope concentration. For monoisotopic10B h-BN, an in-plane thermal conductivity as high as 585 W m−1K−1is measured at room temperature, ~ 80% higher than that of h-BN with a disordered isotope concentration (52%:48% mixture of10B and11B). The temperature-dependent thermal conductivities of monoisotopic h-BN agree well with first principles calculations including only intrinsic phonon-phonon scattering. Our results illustrate the potential to achieve high thermal conductivity in h-BN and control its thermal conductivity, opening avenues for the wide application of h-BN as a next-generation thin-film material for thermal management, metamaterials and metadevices.

     
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  2. Hexagonal boron nitride (hBN) has been grown on sapphire substrates by ultrahigh-temperature molecular beam epitaxy (MBE). A wide range of substrate temperatures and boron fluxes have been explored, revealing that high crystalline quality hBN layers are grown at high substrate temperatures, >1600℃ , and low boron fluxes, ∼1 × 10%& Torr beam equivalent pressure. In situ reflection high-energy electron diffraction revealed the growth of hBN layers with 60° rotational symmetry and the [112+ 0] axis of hBN parallel to the [11+ 00] axis of the sapphire substrate. Unlike the rough, polycrystalline films previously reported, atomic force microscopy and transmission electron microscopy characterization of these films demonstrate smooth, layered, few-nanometer hBN films on a nitridated sapphire substrate. This demonstration of high-quality hBN growth by MBE is a step toward its integration into existing epitaxial growth platforms, applications, and technologies. 
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