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1. Optical spectroscopy of the extremely metal-deficient star-forming galaxy HSC J1631+4426: a test of the strong-line method

   https://doi.org/10.1093/mnrasl/slac095  

   Thuan, T. X. ; Guseva, N. G. ; Izotov, Y. I. ( August 2022 , Monthly Notices of the Royal Astronomical Society: Letters)

   Recently, Kojima and co-authors have reported a record low oxygen abundance, 12 + logO/H = 6.90 ± 0.03, or 1.6 per cent of solar metallicity, in the low-mass star-forming galaxy HSC J1631 + 4426. This exceptionally low oxygen abundance was obtained by the direct method, using the [O iii]λ4363Å emission line. However, using the strong-line method by Izotov et al. (2019b), these authors have derived a significantly higher metallicity 12 + logO/H = 7.175 ± 0.005. To clarify the situation, we have obtained new observations of HSC J1631 + 4426 with the Large Binocular Telescope (LBT)/Multi-Object Dual Spectrograph (MODS). We have derived a higher oxygen abundance, 12 + logO/H = 7.14 ± 0.03, using the direct method, a value similar to the oxygen abundance obtained by the strong-line method. Thus, HSC J1631 + 4426 has a metallicity close to that of the well known blue compact dwarf galaxy I Zw 18.
2. Primordial Helium-3 Redux: The Helium Isotope Ratio of the Orion Nebula*

   https://doi.org/10.3847/1538-4357/ac6503  

   Cooke, Ryan J. ; Noterdaeme, Pasquier ; Johnson, James W. ; Pettini, Max ; Welsh, Louise ; Peroux, Celine ; Murphy, Michael T. ; Weinberg, David H. ( June 2022 , The Astrophysical Journal)

   Abstract We report the first direct measurement of the helium isotope ratio, 3 He/ 4 He, outside of the Local Interstellar Cloud, as part of science-verification observations with the upgraded CRyogenic InfraRed Echelle Spectrograph. Our determination of 3 He/ 4 He is based on metastable He i * absorption along the line of sight toward Θ 2 A Ori in the Orion Nebula. We measure a value 3 He/ 4 He = (1.77 ± 0.13) × 10 −4 , which is just ∼40% above the primordial relative abundance of these isotopes, assuming the Standard Model of particle physics and cosmology, ( 3 He/ 4 He) p = (1.257 ± 0.017) × 10 −4 . We calculate a suite of galactic chemical evolution simulations to study the Galactic build up of these isotopes, using the yields from Limongi & Chieffi for stars in the mass range M = 8–100 M ⊙ and Lagarde et al. for M = 0.8–8 M ⊙ . We find that these simulations simultaneously reproduce the Orion and protosolar 3 He/ 4 He values if the calculations are initialized with a primordial ratio 3 He / 4 He p = ( 1.043 ± 0.089 ) × 10more »− 4 . Even though the quoted error does not include the model uncertainty, this determination agrees with the Standard Model value to within ∼2 σ . We also use the present-day Galactic abundance of deuterium (D/H), helium (He/H), and 3 He/ 4 He to infer an empirical limit on the primordial 3 He abundance, 3 He / H p ≤ ( 1.09 ± 0.18 ) × 10 − 5 , which also agrees with the Standard Model value. We point out that it is becoming increasingly difficult to explain the discrepant primordial 7 Li/H abundance with nonstandard physics, without breaking the remarkable simultaneous agreement of three primordial element ratios (D/H, 4 He/H, and 3 He/ 4 He) with the Standard Model values.« less
3. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K.more »The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less
4. The Direct-method Oxygen Abundance of Typical Dwarf Galaxies at Cosmic High Noon∗

   https://doi.org/10.3847/1538-4357/acb153  

   Gburek, Timothy ; Siana, Brian ; Alavi, Anahita ; Emami, Najmeh ; Richard, Johan ; Freeman, William R. ; Stark, Daniel P. ; Snapp-Kolas, Christopher ( May 2023 , The Astrophysical Journal)

   We present a Keck/MOSFIRE rest-optical composite spectrum of 16 typical gravitationally lensed star-forming dwarf galaxies at 1.7 ≲z≲ 2.6 (z_mean= 2.30), all chosen independent of emission-line strength. These galaxies have a median stellar mass of$\log {(M_{*}/M_{\odot })}_{\mathrm{med}}={8.29}_{-0.43}^{+0.51}$and a median star formation rate of${\mathrm{S}\mathrm{F}\mathrm{R}}_{\mathrm{H}\alpha }^{\mathrm{m}\mathrm{e}\mathrm{d}}={2.25}_{-1.26}^{+2.15}{M}_{\odot }{\mathrm{y}\mathrm{r}}^{-1}$. We measure the faint electron-temperature-sensitive [Oiii]λ4363 emission line at 2.5σ(4.1σ) significance when considering a bootstrapped (statistical-only) uncertainty spectrum. This yields a direct-method oxygen abundance of$12+\log {(\mathrm{O}/\mathrm{H})}_{\mathrm{direct}}={7.88}_{-0.22}^{+0.25}$(${0.15}_{-0.06}^{+0.12}{Z}_{\odot }$). We investigate the applicability at highzof locally calibrated oxygen-based strong-line metallicity relations, finding that the local reference calibrations of Bian et al. best reproduce (≲0.12 dex) our composite metallicity at fixed strong-line ratio. At fixedM_*, our composite is well represented by thez∼ 2.3 direct-method stellar mass—gas-phase metallicity relation (MZR) of Sanders et al. When comparing to predicted MZRs from the IllustrisTNG and FIRE simulations, having recalculated our stellar masses with more realistic nonparametric star formation histories$(\log {(M_{*}/M_{\odot })}_{\mathrm{med}}={8.92}_{-0.22}^{+0.31})$, we find excellent agreement with the FIRE MZR. Our composite is consistent with no metallicity evolution, atmore »fixedM_*and SFR, of the locally defined fundamental metallicity relation. We measure the doublet ratio [Oii]λ3729/[Oii]λ3726 = 1.56 ± 0.32 (1.51 ± 0.12) and a corresponding electron density of$n_e=1_{-0}^{+215}{\mathrm{cm}}^{-3}$($n_e=1_{-0}^{+74}{\mathrm{cm}}^{-3}$) when considering the bootstrapped (statistical-only) error spectrum. This result suggests that lower-mass galaxies have lower densities than higher-mass galaxies atz∼ 2.

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5. The mass–metallicity and the fundamental metallicity relation revisited on a fully Te-based abundance scale for galaxies

   https://doi.org/10.1093/mnras/stz2910  

   Curti, Mirko ; Mannucci, Filippo ; Cresci, Giovanni ; Maiolino, Roberto ( November 2019 , Monthly Notices of the Royal Astronomical Society)

   The relationships between stellar mass, gas-phase metallicity and star-formation rate (i.e. the mass–metallicity, MZR, and the fundamental metallicity relation, FMR) in the local Universe are revisited by fully anchoring the metallicity determination for SDSS galaxies on the Te abundance scale defined exploiting the strong-line metallicity calibrations presented by Curti et al. Self-consistent metallicity measurements allow a more unbiased assessment of the scaling relations involving M, Z and SFR, which provide powerful constraints for the chemical evolution models. We parametrize the MZR with a new functional form that allows us to better characterize the turnover mass. The slope and saturation metallicity are in good agreement with previous determinations of the MZR based on the Te method, while showing significantly lower normalization compared to those based on photoionization models. The Z–SFR dependence at fixed stellar mass is also investigated, being particularly evident for highly star-forming galaxies, where the scatter in metallicity is reduced up to a factor of ${\sim}30{{\ \rm per\ cent}}$. A new parametrization of the FMR is given by explicitly introducing the SFR dependence of the turnover mass into the MZR. The residual scatter in metallicity for the global galaxy population around the new FMR is 0.054 dex. The newmore »FMR presented in this work represents a useful local benchmark to compare theoretical predictions and observational studies (of both local and high-redshift galaxies) whose metallicity measurements are tied to the abundance scale defined by the Te method, hence allowing proper assessment of its evolution with cosmic time.

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