GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions
- PAR ID:
- 10361222
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Journal of Applied Physics
- Volume:
- 131
- Issue:
- 1
- ISSN:
- 0021-8979
- Page Range / eLocation ID:
- Article No. 015703
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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