We report on structural, microstructural, spectroscopic, dielectric, electrical, ferroelectric, ferromagnetic, and magnetodielectric coupling studies of BiFeO3–GdMnO3[(BFO)1–
- Award ID(s):
- 1827622
- NSF-PAR ID:
- 10361474
- Publisher / Repository:
- IOP Publishing
- Date Published:
- Journal Name:
- Materials Research Express
- Volume:
- 8
- Issue:
- 1
- ISSN:
- 2053-1591
- Page Range / eLocation ID:
- Article No. 016302
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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null (Ed.)Sm-doped BiFeO 3 (Bi 0.85 Sm 0.15 FeO 3 , or BSFO) thin films were fabricated on (001) SrTiO 3 (STO) substrates by pulsed laser deposition (PLD) over a range of deposition temperatures (600 °C, 640 °C and 670 °C). Detailed analysis of their microstructure via X-ray diffraction (XRD) and transmission electron microscopy (TEM) shows the deposition temperature dependence of ferroelectric (FE) and antiferroelectric (AFE) phase formation in BSFO. The Sm dopants are clearly detected by high-resolution scanning transmission electron microscopy (HR-STEM) and prove effective in controlling the ferroelectric properties of BSFO. The BSFO ( T dep = 670 °C) presents larger remnant polarization (Pr) than the other two BSFO ( T dep = 600 °C, 640 °C) and pure BiFeO 3 (BFO) thin films. This study paves a simple way for enhancing the ferroelectric properties of BSFO via deposition temperature and further promoting BFO practical applications.more » « less
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Abstract We report on the tunable and enhanced dielectric properties of tungsten (W) incorporated gallium oxide (Ga2O3) polycrystalline electroceramics for energy and power electronic device applications. The W‐incorporated Ga2O3(Ga2−2xWxO3, 0.00 ≤ x ≤ 0.20; GWO) compounds were synthesized by the high‐temperature solid‐state chemical reaction method by varying the W‐content. The fundamental aspects of the dielectric properties in correlation with the crystal structure, phase, and microstructure of the GWO polycrystalline compounds has been investigated in detail. A detailed study performed ascertains the W‐induced changes in the dielectric constant, loss tangent (tan
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Abstract Next‐generation electronics and energy technologies can now be developed as a result of the design, discovery, and development of novel, environmental friendly lead (Pb)‐free ferroelectric materials with improved characteristics and performance. However, there have only been a few reports of such complex materials’ design with multi‐phase interfacial chemistry, which can facilitate enhanced properties and performance. In this context, herein, novel lead‐free piezoelectric materials (1‐
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