Reshchikov, M. A., Demchenko, D. O., Ye, D., Andrieiev, O., Vorobiov, M., Grabianska, K., Zajac, M., Nita, P., Iwinska, M., Bockowski, M., McEwen, B., and Shahedipour-Sandvik, F. The effect of annealing on photoluminescence from defects in ammonothermal GaN. Journal of Applied Physics 131.3 Web. doi:10.1063/5.0077796.

Reshchikov, M. A., Demchenko, D. O., Ye, D., Andrieiev, O., Vorobiov, M., Grabianska, K., Zajac, M., Nita, P., Iwinska, M., Bockowski, M., McEwen, B., & Shahedipour-Sandvik, F. The effect of annealing on photoluminescence from defects in ammonothermal GaN. Journal of Applied Physics, 131 (3). https://doi.org/10.1063/5.0077796

Reshchikov, M. A., Demchenko, D. O., Ye, D., Andrieiev, O., Vorobiov, M., Grabianska, K., Zajac, M., Nita, P., Iwinska, M., Bockowski, M., McEwen, B., and Shahedipour-Sandvik, F. "The effect of annealing on photoluminescence from defects in ammonothermal GaN". Journal of Applied Physics 131 (3). Country unknown/Code not available: American Institute of Physics. https://doi.org/10.1063/5.0077796. https://par.nsf.gov/biblio/10361897.

@article{osti_10361897,
place = {Country unknown/Code not available}, title = {The effect of annealing on photoluminescence from defects in ammonothermal GaN}, url = {https://par.nsf.gov/biblio/10361897}, DOI = {10.1063/5.0077796}, abstractNote = {Not Available}, journal = {Journal of Applied Physics}, volume = {131}, number = {3}, publisher = {American Institute of Physics}, author = {Reshchikov, M. A. and Demchenko, D. O. and Ye, D. and Andrieiev, O. and Vorobiov, M. and Grabianska, K. and Zajac, M. and Nita, P. and Iwinska, M. and Bockowski, M. and McEwen, B. and Shahedipour-Sandvik, F.}, }