Austin, Hayley J., Mitchell, Brandon, Timmerman, Dolf, Tatebayashi, Jun, Ichikawa, Shuhei, Fujiwara, Yasufumi, and Dierolf, Volkmar. Modeling defect mediated color-tunability in LEDs with Eu-doped GaN-based active layers. Journal of Applied Physics 131.4 Web. doi:10.1063/5.0077223.

Austin, Hayley J., Mitchell, Brandon, Timmerman, Dolf, Tatebayashi, Jun, Ichikawa, Shuhei, Fujiwara, Yasufumi, & Dierolf, Volkmar. Modeling defect mediated color-tunability in LEDs with Eu-doped GaN-based active layers. Journal of Applied Physics, 131 (4). https://doi.org/10.1063/5.0077223

Austin, Hayley J., Mitchell, Brandon, Timmerman, Dolf, Tatebayashi, Jun, Ichikawa, Shuhei, Fujiwara, Yasufumi, and Dierolf, Volkmar. "Modeling defect mediated color-tunability in LEDs with Eu-doped GaN-based active layers". Journal of Applied Physics 131 (4). Country unknown/Code not available: American Institute of Physics. https://doi.org/10.1063/5.0077223. https://par.nsf.gov/biblio/10361996.

@article{osti_10361996,
place = {Country unknown/Code not available}, title = {Modeling defect mediated color-tunability in LEDs with Eu-doped GaN-based active layers}, url = {https://par.nsf.gov/biblio/10361996}, DOI = {10.1063/5.0077223}, abstractNote = {Not Available}, journal = {Journal of Applied Physics}, volume = {131}, number = {4}, publisher = {American Institute of Physics}, author = {Austin, Hayley J. and Mitchell, Brandon and Timmerman, Dolf and Tatebayashi, Jun and Ichikawa, Shuhei and Fujiwara, Yasufumi and Dierolf, Volkmar}, }