skip to main content


Title: Fabrication Method, Ferromagnetic Resonance Spectroscopy and Spintronics Devices Based on the Organic‐Based Ferrimagnet Vanadium Tetracyanoethylene
Abstract

Organic‐based magnetic materials have been used for spintronic device applications as electrodes of spin aligned carriers and spin‐pumping substrates. Their advantages over more traditional inorganic magnets include reduced magnetic damping and lower fabrication costs. Vanadium tetracyanoethylene, V[TCNE]x(x ≈ 2), is an organic‐based ferrimagnet with an above room‐temperature magnetic order temperature (Tc ≈ 400 K). V[TCNE]xhas deposition flexibility and can be grown on a variety of substrates via low‐temperature chemical vapor deposition (CVD). A systematic study of V[TCNE]xthin‐film CVD parameters to achieve optimal film quality, reproducibility, and excellent magnetic properties is reported. This is assessed by broadband ferromagnetic resonance (FMR) that shows most narrow linewidth of ≈1.5 Gauss and an extremely low Gilbert damping coefficient. The neat V[TCNE]xfilms are shown to be efficient spin injectors via spin pumping into an adjacent platinum layer. Also, under an optimized FMR linewidth, the V[TCNE]xfilms exhibit Fano‐type resonance with a continuum broadband absorption in the microwave range, which can be readily tuned by the microwave frequency.

 
more » « less
NSF-PAR ID:
10363439
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  ;  ;  ;  
Publisher / Repository:
Wiley Blackwell (John Wiley & Sons)
Date Published:
Journal Name:
Advanced Functional Materials
Volume:
31
Issue:
30
ISSN:
1616-301X
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract

    Spin waves, quantized as magnons, have low energy loss and magnetic damping, which are critical for devices based on spin‐wave propagation needed for information processing devices. The organic‐based magnet [V(TCNE)x; TCNE = tetracyanoethylene;x≈ 2] has shown an extremely low magnetic damping comparable to, for example, yttrium iron garnet (YIG). The excitation, detection, and utilization of coherent and non‐coherent spin waves on various modes in V(TCNE)xis demonstrated and show that the angular momentum carried by microwave‐excited coherent spin waves in a V(TCNE)xfilm can be transferred into an adjacent Pt layer via spin pumping and detected using the inverse spin Hall effect. The spin pumping efficiency can be tuned by choosing different excited spin wave modes in the V(TCNE)xfilm. In addition, it is shown that non‐coherent spin waves in a V(TCNE)xfilm, excited thermally via the spin Seebeck effect, can also be used as spin pumping source that generates an electrical signal in Pt with a sign change in accordance with the magnetization switching of the V(TCNE)x. Combining coherent and non‐coherent spin wave detection, the spin pumping efficiency can be thermally controlled, and new insight is gained for the spintronic applications of spin wave modes in organic‐based magnets.

     
    more » « less
  2. Abstract

    Electric‐field‐controlled magnetism is of importance in realizing energy efficient, dense and fast information storage and processing. Strain‐mediated converse magneto‐electric (ME) coupling between ferromagnetic and ferroelectric heterostructure shows promise for realizing electric‐controlled magnetism at room temperature and is attracting a number of recent investigations. However, such ME‐effect studies have mainly focus on magnetic metals. In this work, high quality yttrium iron garnet (Y3Fe5O12(YIG)) films are deposited directly onto (100)‐oriented single‐crystal Pb (Mg1/3Nb2/3)0.7Ti0.3O3(PMN‐PT) substrates by means of magnetron sputtering. The electric‐field‐induced polarization switching and lattice strain in the PMN‐PT substrate results in two distinct magnetization states in the YIG film that are nonvolatile and electrically reversible. Because of the direct contact between the YIG and the PMN‐PT substrate, an efficient ME coupling and an almost 90° rotation of the easy axis of the YIG film can be realized. Furthermore, the electric‐field‐controlled hysteresis loop‐like ferromagnetic resonance field shifts and spin pumping signals are observed in Pt/YIG/PMN‐PT heterostructures. Thus, the obstacle is overcome via growing high‐quality YIG thin films directly onto PMN‐PT substrates and an efficient manipulation of magnetism and pure spin current transport by electric field is thereby realized. These findings are instructive for future low‐power magnetic insulator‐based spintronic devices.

     
    more » « less
  3. Two-dimensional van der Waals (vdWs) materials have gathered a lot of attention recently. However, the majority of these materials have Curie temperatures that are well below room temperature, making it challenging to incorporate them into device applications. In this work, we synthesized a room-temperature vdW magnetic crystal Fe5GeTe2 with a Curie temperature T$_c = 332$ K, and studied its magnetic properties by vibrating sample magnetometry (VSM) and broadband ferromagnetic resonance (FMR) spectroscopy. The experiments were performed with external magnetic fields applied along the c-axis (H$\parallel$c) and the ab-plane (H$\parallel$ab), with temperatures ranging from 300 to 10 K. We have found a sizable Landé g-factor difference between the H$\parallel$c and H$\parallel$ab cases. In both cases, the Landé g-factor values deviated from g = 2. This indicates contribution of orbital angular momentum to the magnetic moment. The FMR measurements reveal that Fe5GeTe2 has a damping constant comparable to Permalloy. With reducing temperature, the linewidth was broadened. Together with the VSM data, our measurements indicate that Fe5GeTe2 transitions from ferromagnetic to ferrimagnetic at lower temperatures. Our experiments highlight key information regarding the magnetic state and spin scattering processes in Fe5GeTe2, which promote the understanding of magnetism in Fe5GeTe2, leading to implementations of Fe5GeTe2 based room-temperature spintronic devices. 
    more » « less
  4. This report is on the nature of strain in thin films of yttrium iron garnet (YIG) on yttrium aluminum garnet (YAG) substrates due to film-substrate lattice mismatch and the resulting induced magnetic anisotropy. Films with thickness 55 nm to 380 nm were deposited on (100), (110), and (111) YAG substrates using pulsed laser deposition (PLD) techniques and characterized by structural and magnetic characterization techniques. The in-plane strain determined to be compressive using X-ray diffraction (XRD). It varied from −0.12% to −0.98% and increased in magnitude with increasing film thickness and was relatively large in films on (100) YAG. The out-of-plane strain was tensile and also increased with increasing film thickness. The estimated strain-induced magnetic anisotropy field, found from XRD data, was out of plane; its value increased with film thickness and ranged from 0.47 kOe to 3.96 kOe. Ferromagnetic resonance (FMR) measurements at 5 to 21 GHz also revealed the presence of a perpendicular magnetic anisotropy that decreased with increasing film thickness and its values were smaller than values obtained from XRD data. The PLD YIG films on YAG substrates exhibiting a perpendicular anisotropy field have the potential for use in self-biased sensors and high-frequency devices. 
    more » « less
  5. Abstract

    New deposition techniques for amorphous oxide semiconductors compatible with silicon back end of line manufacturing are needed for 3D monolithic integration of thin‐film electronics. Here, three atomic layer deposition (ALD) processes are compared for the fabrication of amorphous zinc tin oxide (ZTO) channels in bottom‐gate, top‐contact n‐channel transistors. As‐deposited ZTO films, made by ALD at 150–200 °C, exhibit semiconducting, enhancement‐mode behavior with electron mobility as high as 13 cm2V−1s−1, due to a low density of oxygen‐related defects. ZTO deposited at 200 °C using a hybrid thermal‐plasma ALD process with an optimal tin composition of 21%, post‐annealed at 400 °C, shows excellent performance with a record high mobility of 22.1 cm2V–1s–1and a subthreshold slope of 0.29 V dec–1. Increasing the deposition temperature and performing post‐deposition anneals at 300–500 °C lead to an increased density of the X‐ray amorphous ZTO film, improving its electrical properties. By optimizing the ZTO active layer thickness and using a high‐kgate insulator (ALD Al2O3), the transistor switching voltage is lowered, enabling electrical compatibility with silicon integrated circuits. This work opens the possibility of monolithic integration of ALD ZTO‐based thin‐film electronics with silicon integrated circuits or onto large‐area flexible substrates.

     
    more » « less