Van der Waals interactions in 2D materials have enabled the realization of nanoelectronics with high‐density vertical integration. Yet, poor energy transport through such 2D–2D and 2D–3D interfaces can limit a device's performance due to overheating. One long‐standing question in the field is how different encapsulating layers (e.g., contact metals or gate oxides) contribute to the thermal transport at the interface of 2D materials with their 3D substrates. Here, a novel self‐heating/self‐sensing electrical thermometry platform is developed based on atomically thin, metallic Ti3C2MXene sheets, which enables experimental investigation of the thermal transport at a Ti3C2/SiO2interface, with and without an aluminum oxide (AlO
Understanding the fundamentals of nanoscale heat propagation is crucial for next‐generation electronics. For instance, weak van der Waals bonds of layered materials are known to limit their thermal boundary conductance (TBC), presenting a heat dissipation bottleneck. Here, a new nondestructive method is presented to probe heat transport in nanoscale crystalline materials using time‐resolved X‐ray measurements of photoinduced thermal strain. This technique directly monitors time‐dependent temperature changes in the crystal and the subsequent relaxation across buried interfaces by measuring changes in the
- NSF-PAR ID:
- 10363674
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Functional Materials
- Volume:
- 30
- Issue:
- 34
- ISSN:
- 1616-301X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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