Engineering electronic bandgaps is crucial for applications in information technology, sensing, and renewable energy. Transition metal dichalcogenides (TMDCs) offer a versatile platform for bandgap modulation through alloying, doping, and heterostructure formation. Here, the synthesis of a 2D MoxW1‐xS2graded alloy is reported, featuring a Mo‐rich center that transitions to W‐rich edges, achieving a tunable bandgap of 1.85 to 1.95 eV when moving from the center to the edge of the flake. Aberration‐corrected high‐angle annular dark‐field scanning transmission electron microscopy showed the presence of sulfur monovacancy, VS, whose concentration varied across the graded MoxW1‐xS2layer as a function of Mo content with the highest value in the Mo‐rich center region. Optical spectroscopy measurements supported by ab initio calculations reveal a doublet electronic state of VS, which is split due to the spin‐orbit interaction, with energy levels close to the conduction band or deep in the bandgap depending on whether the vacancy is surrounded by W atoms or Mo atoms. This unique electronic configuration of VSin the alloy gave rise to four spin‐allowed optical transitions between the VSlevels and the valence bands. The study demonstrates the potential of defect and optical engineering in 2D monolayers for advanced device applications.
Bi2Se3is a prototypical topological insulator, which has a small bandgap (∼0.3 eV) and topologically protected conducting surface states. This material exhibits quite strong thermoelectric effects. Here, we show in a mechanically exfoliated thick (∼100 nm) nanoflake device that we can measure the energy dependent optical absorption through the photothermoelectric effect. Spectral signatures are seen for a number of optical transitions between the valence and conduction bands, including a broad peak at 1.5 eV, which is likely dominated by bulk band-to-band optical transitions but is at the same energy as the well-known optical transition between the two topologically protected conducting surface states. We also observe a surprising linear polarization dependence in the response of the device that reflects the influence of the metal contacts.
more » « less- NSF-PAR ID:
- 10364160
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 120
- Issue:
- 12
- ISSN:
- 0003-6951
- Page Range / eLocation ID:
- Article No. 122110
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
more » « less
Abstract -
more » « less
Abstract Here, the observation of spin‐polarized emission for the Au25(SC8H9)18monolayer‐protected cluster (MPC) is reported. Variable‐temperature variable‐field magnetic circular photoluminescence (VTV‐MCPL) measurements are combined with VT‐PL spectroscopy to provide state‐resolved characterization of the transient electronic structure and spin‐polarized electron‐hole recombination dynamics of Au25(SC8H9)18. Through analysis of VTV‐MCPL measurements, a low energy (1.64 eV) emission peak is assigned to intraband relaxation between core‐metal‐localized superatom‐D to ‐P orbitals. Two higher energy interband components (1.78 eV, 1.94 eV) are assigned to relaxation from superatom‐D orbitals to states localized to the inorganic semirings. For both intraband superatom‐based or interband relaxation mechanisms, the extent of spin‐polarization, quantified as the degree of circular polarization (DOCP), is determined by state‐specific electron‐vibration coupling strengths and energy separations of bright and dark electronic fine‐structure levels. At low temperatures (<60 K), metal–metal superatom‐based intraband transitions dominate the global PL emission. At higher temperatures (>60 K), interband ligand‐based emission is dominant. In the low‐temperature PL regime, increased sample temperature results in larger global PL intensity. In the high‐temperature regime, increased temperature quenches interband radiative recombination. The relative intensity for each PL mechanism is discussed in terms of state‐specific electronic‐vibrational coupling strengths and related to the total angular momentum, quantified by Landé
g ‐factors. -
more » « less
Abstract Josephson proximity junctions and devices employing topological insulators are promising candidates for realizing topological superconductivity and topologically protected quantum circuits. Here, the new type of oscillations of the critical Josephson current in the ballistic Nb‐Bi2Te2.3Se0.7‐Nb junctions subject to the magnetic fields is reported. The oscillations appear below ≈400 mK and have a very unusual sharp‐peaked shape. Their ultra‐short period ≈1 Oe, by orders of magnitude shorter than the expected periodicity due to fluxoid quantization in the device, corresponds to the extremely low energy scale ≈1 eV. It is established that the observed effect is due to the resonant transmission of Andreev quasiparticles via the peculiar energy levels forming near the S‐TI interfaces.
-
more » « less
Abstract From a fundamental science perspective, black phosphorus (BP) is a canonical example of a material that possesses fascinating surface and electronic properties. It has extraordinary in‐plane anisotropic electrical, optical, and vibrational states, as well as a tunable band gap. However, instability of the surface due to chemical degradation in ambient conditions remains a major impediment to its prospective applications. Early studies were limited by the degradation of black phosphorous surfaces in air. Recently, several robust strategies have been developed to mitigate these issues, and these novel developments can potentially allow researchers to exploit the extraordinary properties of this material and devices made out of it. Here, the fundamental chemistry of BP degradation and the tremendous progress made to address this issue are extensively reviewed. Device performances of encapsulated BP are also compared with nonencapsulated BP. In addition, BP possesses sensitive anisotropic photophysical surface properties such as excitons, surface plasmons/phonons, and topologically protected and Dirac semi‐metallic surface states. Ambient degradation as well as any passivation method used to protect the surface could affect the intrinsic surface properties of BP. These properties and the extent of their modifications by both the degradation and passivation are reviewed.
-
more » « less
Abstract We investigated the doping and temperature evolutions of the optical response of Sr3(Ir1−
x Mnx )2O7single crystals with 0 ≤x ≤ 0.36 by utilizing infrared spectroscopy. Substitution of 3d transition metal Mn ions into Sr3Ir2O7is expected to induce an insulator-to-metal transition via the decrease in the magnitude of the spin–orbit coupling and the hole doping. In sharp contrast, our data reveal the resilience of the spin–orbit coupling and the incoherent character of the charge transport. Upon Mn substitution, an incoherent in-gap excitation at about 0.25 eV appeared with the decrease in the strength of the optical transitions between the effective total angular momentumJ effbands of the Ir ions. The resonance energies of the optical transitions between theJ effbands which are directly proportional to the magnitude of the spin–orbit coupling hardly varied. In addition to these evolutions of the low-energy response, Mn substitution led to the emergence of a distinct high-energy optical excitation at about 1.2 eV which is larger than the resonance energies of the optical transitions between theJ effbands. This observation indicates that the Mn 3d states are located away from the Ir 5d states in energy and that the large difference in the on-site energies of the transition metal ions is responsible for the incoherent charge transport and the robustness of the spin–orbit coupling. The effect of Mn substitution was also registered in the temperature dependence of the electronic response. The anomaly in the optical response of the parent compound observed at the antiferromagnetic transition temperature is notably suppressed in the Mn-doped compounds despite the persistence of the long-range antiferromagnetic ordering. The suppression of the spin-charge coupling could be related to charge disproportionation of the Ir ions.
