The addition of small quantities of aluminum oxide (Al2O3) to 8 mol% yttria‐stabilized zirconia (8YSZ) benefits conventional sintering by acting as a sintering aid and altering grain growth behavior. However, it is uncertain if these benefits observed during conventional sintering extend to flash sintering. In this work, nanoscale films of Al2O3are deposited on 8YSZ powders by particle atomic layer deposition (ALD). The ALD‐coated powders were flash sintered using voltage‐to‐current control and current rate experiments. The sintering behavior, microstructural evolution, and ionic conductivities were characterized. The addition of Al2O3films changed the conductivity of the starting powder, effectively moving the flash onset temperature. The grain size of the samples flashed with current rate experiments was ~65% smaller than that of conventionally sintered samples. Measurement of grain size and estimates of sample density as a function of temperature during flash sintering showed that small quantities of Al2O3can enhance grain growth and sintering of 8YSZ. This suggests that Al2O3dissolves into the 8YSZ grain boundaries during flash sintering to form complexions that enhance the diffusion of species controlling these processes.
Herein, we describe an atomic layer deposition (ALD) system that is optimized for the growth of thin films on high-surface-area, porous materials. The system incorporates a moveable dual-zone furnace allowing for rapid transfer of a powder substrate between heating zones whose temperatures are optimized for precursor adsorption and oxidative removal of the precursor ligands. The reactor can both be evacuated, eliminating the need for a carrier gas during precursor exposure, and rotated, to enhance contact between a powder support and the gas phase, both of which help us to minimize mass transfer limitations in the pores during film growth. The capabilities of the ALD system were demonstrated by growing La2O3, Fe2O3, and LaFeO3films on a 120 m2 g−1MgAl2O4powder. Analysis of these films using scanning transmission electron microscopy and temperature-programmed desorption of 2-propanol confirmed the conformal nature of the oxide films.
more » « less- NSF-PAR ID:
- 10364392
- Publisher / Repository:
- American Vacuum Society
- Date Published:
- Journal Name:
- Journal of Vacuum Science & Technology A
- Volume:
- 40
- Issue:
- 3
- ISSN:
- 0734-2101
- Page Range / eLocation ID:
- Article No. 032401
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
Abstract -
Abstract Achieving facile nucleation of noble metal films through atomic layer deposition (ALD) is extremely challenging. To this end, η4‐2,3‐dimethylbutadiene ruthenium(0)tricarbonyl (Ru(DMBD)(CO)3), a zero‐valent complex, has recently been reported to achieve good nucleation by ALD at relatively low temperatures and mild reaction conditions. The authors study the growth mechanism of this precursor by in situ quartz‐crystal microbalance and quadrupole mass spectrometry during Ru ALD, complemented by ex situ film characterization and kinetic modeling. These studies reveal that Ru(DMBD)(CO)3produces high‐quality Ru films with excellent nucleation properties. This results in smooth, coalesced films even at low film thicknesses, all important traits for device applications. However, Ru deposition follows a kinetically limited decarbonylation reaction scheme, akin to typical chemical vapor deposition processes, with a strong dependence on both temperature and reaction timescale. The non‐self‐limiting nature of the kinetically driven mechanism presents both challenges for ALD implementation and opportunities for process tuning. By surveying reports of similar precursors, it is suggested that the findings can be generalized to the broader class of zero‐oxidation state carbonyl‐based precursors used in thermal ALD, with insight into the design of effective saturation studies.
-
Abstract Aluminum nitride (AlN) is a promising material for electronic substrates and heat sinks. However, AlN powders react with water that adversely affects final part properties and necessitates processing in organic solvents, increasing the cost of AlN parts. Small quantities of yttrium oxide (Y2O3) are commonly added to AlN particles to enable liquid phase sintering. To mitigate the reaction of AlN particles with water, particle atomic layer deposition (ALD) was used to coat AlN powders with conformal films of Y2O3prior to densification and powder processing. When AlN particles were coated with 6 nm thick films of amorphous Y2O3, the hydrolysis reaction was significantly suppressed over 48 h, demonstrating that Y2O3nanofilms on AlN powders act as a barrier coating in an aqueous solution. AlN powders with Y2O3addition by particle ALD sintered to high relative densities (≥90% theoretical) after sintering at 1800°C for 50 min.
-
Abstract A chromium(II)‐based metal–organic framework Cr3[(Cr4Cl)3(BTT)8]2(Cr‐BTT; BTT3−=1,3,5‐benzenetristetrazolate), featuring coordinatively unsaturated, redox‐active Cr2+cation sites, was synthesized and investigated for potential applications in H2storage and O2production. Low‐pressure H2adsorption and neutron powder diffraction experiments reveal moderately strong Cr–H2interactions, in line with results from previously reported M‐BTT frameworks. Notably, gas adsorption measurements also reveal excellent O2/N2selectivity with substantial O2reversibility at room temperature, based on selective electron transfer to form CrIIIsuperoxide moieties. Infrared spectroscopy and powder neutron diffraction experiments were used to confirm this mechanism of selective O2binding.
-
Growths of monoclinic (Al
x Ga1−x )2O3thin films up to 99% Al contents are demonstrated via metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMGa) as the Ga precursor. The utilization of TMGa, rather than triethylgallium, enables a significant improvement of the growth rates (>2.5 μm h−1) of β‐(Alx Ga1−x )2O3thin films on (010), (100), and (01) β‐Ga2O3substrates. By systematically tuning the precursor molar flow rates, growth of coherently strained phase pure β‐(Alx Ga1−x )2O3films is demonstrated by comprehensive material characterizations via high‐resolution X‐ray diffraction (XRD) and atomic‐resolution scanning transmission electron microscopy (STEM) imaging. Monoclinic (Alx Ga1−x )2O3films with Al contents up to 99, 29, and 16% are achieved on (100), (010), and (01) β‐Ga2O3substrates, respectively. Beyond 29% of Al incorporation, the (010) (Alx Ga1−x )2O3films exhibit β‐ to γ‐phase segregation. β‐(Alx Ga1−x )2O3films grown on (01) β‐Ga2O3show local segregation of Al along (100) plane. Record‐high Al incorporations up to 99% in monoclinic (Alx Ga1−x )2O3grown on (100) Ga2O3are confirmed from XRD, STEM, electron nanodiffraction, and X‐ray photoelectron spectroscopy measurements. These results indicate great promises of MOCVD development of β‐(Alx Ga1−x )2O3films and heterostructures with high Al content and growth rates using TMGa for next‐generation high‐power and high‐frequency electronic devices.