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1. Electrical properties of α-Ga ₂ O ₃ films grown by halide vapor phase epitaxy on sapphire with α-Cr ₂ O ₃ buffers

   https://doi.org/10.1063/5.0090832  

   Polyakov, Alexander ; Nikolaev, Vladimir ; Stepanov, Sergey ; Almaev, Alexei ; Pechnikov, Alexei ; Yakimov, Eugene ; Kushnarev, Bogdan O. ; Shchemerov, Ivan ; Scheglov, Mikhail ; Chernykh, Alexey ; et al ( June 2022 , Journal of Applied Physics)

   We report on growth and electrical properties of α-Ga₂O₃films prepared by halide vapor phase epitaxy (HVPE) at 500 °C on α-Cr₂O₃buffers predeposited on sapphire by magnetron sputtering. The α-Cr₂O₃buffers showed a wide microcathodoluminescence (MCL) peak near 350 nm corresponding to the α-Cr₂O₃bandgap and a sharp MCL line near 700 nm due to the Cr⁺intracenter transition. Ohmic contacts to Cr₂O₃were made with both Ti/Au or Ni, producing linear current–voltage ( I– V) characteristics over a wide temperature range with an activation energy of conductivity of ∼75 meV. The sign of thermoelectric power indicated p-type conductivity of the buffers. Sn-doped, 2- μm-thick α-Ga₂O₃films prepared on this buffer by HVPE showed donor ionization energies of 0.2–0.25 eV, while undoped films were resistive with the Fermi level pinned at E_Cof 0.3 eV. The I– V and capacitance–voltage ( C– V) characteristics of Ni Schottky diodes on Sn-doped samples using a Cr₂O₃buffer indicated the presence of two face-to-face junctions, one between n-Ga₂O₃and p-Cr₂O₃, the other due to the Ni Schottky diode with n-Ga₂O₃. The spectral dependence of the photocurrent measured on the structure showed the presence of three major deep traps with optical ionization thresholds near 1.3, 2, and 2.8 eV. Photoinduced current transient spectroscopy spectra of the structures were dominated bymore »deep traps with an ionization energy of 0.95 eV. These experiments suggest another pathway to obtain p–n heterojunctions in the α-Ga₂O₃system.

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2. Sub-micrometer particle size effects on metastable phases for a photoswitchable Co–Fe Prussian blue analog

   https://doi.org/10.1063/5.0074165  

   Itoi, Miho ; Maurin, Isabelle ; Boukheddaden, Kamel ; Andrus, Matthew J. ; Talham, Daniel R. ; Elkaim, Erik ; Uwatoko, Yoshiya ( February 2022 , Journal of Applied Physics)

   Metastable phases of the photoswitchable molecular magnet K_0.3Co[Fe(CN)₆]_0.77 ⋅  nH₂O in sub-micrometer particles have been structurally investigated by synchrotron powder x-ray diffraction (PXRD) measurements. The K_0.3Co[Fe(CN)₆]_0.77 ⋅  nH₂O bulk compound (studied here with a sample having average particle size of 500 nm) undergoes a charge transfer coupled spin transition (CTCST), where spin configurations change between a paramagnetic Co^II( S = 3/2) –Fe^III( S = 1/2) high-temperature (HT) state and a diamagnetic Co^III( S = 0) –Fe^II( S = 0) low-temperature (LT) state. The bulk compound exhibits a unique intermediate (IM) phase, which corresponds to a mixture of HT and LT spin states that depend on the cooling rate. Several hidden metastable HT states emerge as a function of thermal and photo stimuli, namely: (1) a quench (Q) state generated from the HT state by flash cooling, (2) a LTPX state obtained by photoexcitation from the LT state derived by thermal relaxation from the Q state, and (3) an IMPX state accessed by photo-irradiation from the IM state. A sample with a smaller particle size, 135 nm, is investigated for which the particles are on the scale of the coherent LT domains in the IM phase within the larger 500 nm sample. PXRD studies under controlled thermal and/or optical excitations have clarified that themore »reduction of the particle size profoundly affects the structural changes associated with the CTCST. The unusual IM state is also observed as segregated domains in the 135 nm particle, but the collective structural transformations are more hindered in small particles. The volume change decreases to 2%–3%, almost half the value found for 500 nm particles (5%–8%), even though the linear thermal expansion coefficients are larger for the smaller particles. Furthermore, photoexcitation from the IM and LT states does not turn into single phases in the smaller particles, presumably because of the multiple interfaces and/or internal stress generated by the coexistence of small Co^II–Fe^IIIand Co^III–Fe^IIdomains in the lattice. Since the reduced particle size limits cooperativity and domain growth in the lattice, CTCST in the small particle sample becomes less sensitive to external stimuli.

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3. Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials

   https://doi.org/10.3390/cryst10020136  

   Xiao, Zhigang ; Kisslinger, Kim ; Chance, Sam ; Banks, Samuel ( February 2020 , Crystals)

   We report the growth of nanoscale hafnium dioxide (HfO2) and zirconium dioxide (ZrO2) thin films using remote plasma-enhanced atomic layer deposition (PE-ALD), and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using the HfO2 and ZrO2 thin films as the gate oxide. Tetrakis (dimethylamino) hafnium (Hf[N(CH3)2]4) and tetrakis (dimethylamino) zirconium (IV) (Zr[N(CH3)2]4) were used as the precursors, while O2 gas was used as the reactive gas. The PE-ALD-grown HfO2 and ZrO2 thin films were analyzed using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM). The XPS measurements show that the ZrO2 film has the atomic concentrations of 34% Zr, 2% C, and 64% O while the HfO2 film has the atomic concentrations of 29% Hf, 11% C, and 60% O. The HRTEM and XRD measurements show both HfO2 and ZrO2 films have polycrystalline structures. n-channel and p-channel metal-oxide semiconductor field-effect transistors (nFETs and pFETs), CMOS inverters, and CMOS ring oscillators were fabricated to test the quality of the HfO2 and ZrO2 thin films as the gate oxide. Current-voltage (IV) curves, transfer characteristics, and oscillation waveforms were measured from the fabricated transistors, inverters, and oscillators, respectively. The experimental results measured from the HfO2 and ZrO2more »thin films were compared.« less
4. Searching for a route to synthesize in situ epitaxial Pr2Ir2O7 thin films with thermodynamic methods

   https://doi.org/10.1038/s41524-021-00610-9  

   Guo, Lu ; Shang, Shun-Li ; Campbell, Neil ; Evans, Paul G. ; Rzchowski, Mark ; Liu, Zi-Kui ; Eom, Chang-Beom ( September 2021 , npj Computational Materials)

   In situ growth of pyrochlore iridate thin films has been a long-standing challenge due to the low reactivity of Ir at low temperatures and the vaporization of volatile gas species such as IrO₃(g) and IrO₂(g) at high temperatures and highP_O2. To address this challenge, we combine thermodynamic analysis of the Pr-Ir-O₂system with experimental results from the conventional physical vapor deposition (PVD) technique of co-sputtering. Our results indicate that only high growth temperatures yield films with crystallinity sufficient for utilizing and tailoring the desired topological electronic properties and the in situ synthesis of Pr₂Ir₂O₇thin films is fettered by the inability to grow withP_O2on the order of 10 Torr at high temperatures, a limitation inherent to the PVD process. Thus, we suggest techniques capable of supplying high partial pressure of key species during deposition, in particular chemical vapor deposition (CVD), as a route to synthesis of Pr₂Ir₂O₇.
5. Towards Horizontal Heterojunctions for Tunnel Field Effect Transistors with Template Assisted Selective Epitaxy via MOCVD

   Brunelli, Simone ; Markman, B ; Wu, J ; Tseng, HY ; Goswami, A ; Rodwell, M ; Palmstrøm, P ; Klamkin, K ( June 2018 , International conference on MOVPE)

   Tunneling field effect transistors (TFETs) have gained much interest in the previous decade for use in low power CMOS electronics due to their sub-thermal switching [1]. To date, all TFETs are fabricated as vertical nanowires or fins with long, difficult processes resulting in long learning cycle and incompatibility with modern CMOS processing. Because most TFETs are heterojunction TFETs (HJ-TFETs), the geometry of the device is inherently vertically because dictated by the orientation of the tunneling HJ, achieved by typical epitaxy. Template assisted selective epitaxy was demonstrated for vertical nanowires [2] and horizontally arranged nanorods [3] for III-V on Si integration. In this work, we report results on the area selective and template assisted epitaxial growth of InP, utilizing SiO2 based confined structures on InP substrates, which enables horizontal HJs, that can find application in the next generation of TFET devices. The geometries of the confined structures used are so that only a small area of the InP substrate, dubbed seed, is visible to the growth atmosphere. Growth is initiated selectively only at the seed and then proceeds in the hollow channel towards the source hole. As a result, growth resembles epitaxial lateral overgrowth from a single nucleation point [4], reapingmore »the benefits of defect confinement and, contrary to spontaneous nanowire growth, allows orientation in an arbitrary, template defined direction. Indium phosphide 2-inch (110) wafers are used as the starting substrate. The process flow (Fig.1) consists of two plasma enhanced chemical vapor deposition (PECVD) steps of SiO2, appropriately patterned with electron beam lithography (EBL), around a PECVD amorphous silicon sacrificial layer. The sacrificial layer is ultimately wet etched with XeF2 to form the final, channel like template. Not shown in the schematic in Fig.1 is an additional, ALD deposited, 3 nm thick, alumina layer which prevents plasma damage to the starting substrate and is removed via a final tetramethylammonium hydroxide (TMAH) based wet etch. As-processed wafers were then diced and loaded in a Thomas Swan Horizontal reactor. Successful growth conditions found were 600°C with 4E6 mol/min of group III precursor, a V/III ratio of 400 and 8 lpm of hydrogen as carrier gas. Trimethylindium (TMIn) and tertiarybutylphosphine (TBP) were used as In and P precursors respectively. Top view SEM (Fig.2) confirms growth in the template thanks to sufficient Z-contrast despite the top oxide layer, not removed before imaging. TEM imaging shows a cross section of the confined structure taken at the seed hole (Fig.3). The initial growth interface suggests growth was initiated at the seed hole and atomic order of the InP conforms to the SiO2 template both at the seed and at the growth front. A sharp vertical facet is an encouraging result for the future development of vertical HJ based III-V semiconductor devices.« less