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Title: Flexible atomic layer deposition system for coating porous materials

Herein, we describe an atomic layer deposition (ALD) system that is optimized for the growth of thin films on high-surface-area, porous materials. The system incorporates a moveable dual-zone furnace allowing for rapid transfer of a powder substrate between heating zones whose temperatures are optimized for precursor adsorption and oxidative removal of the precursor ligands. The reactor can both be evacuated, eliminating the need for a carrier gas during precursor exposure, and rotated, to enhance contact between a powder support and the gas phase, both of which help us to minimize mass transfer limitations in the pores during film growth. The capabilities of the ALD system were demonstrated by growing La2O3, Fe2O3, and LaFeO3films on a 120 m2 g−1MgAl2O4powder. Analysis of these films using scanning transmission electron microscopy and temperature-programmed desorption of 2-propanol confirmed the conformal nature of the oxide films.

 
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NSF-PAR ID:
10364392
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  
Publisher / Repository:
American Vacuum Society
Date Published:
Journal Name:
Journal of Vacuum Science & Technology A
Volume:
40
Issue:
3
ISSN:
0734-2101
Page Range / eLocation ID:
Article No. 032401
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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