skip to main content


Title: Online Damage Monitoring of SiC f -SiC m Composite Materials Using Acoustic Emission and Deep Learning
NSF-PAR ID:
10365779
Author(s) / Creator(s):
; ; ; ; ;
Publisher / Repository:
Institute of Electrical and Electronics Engineers
Date Published:
Journal Name:
IEEE Access
Volume:
7
ISSN:
2169-3536
Page Range / eLocation ID:
p. 140534-140541
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract

    We present results from high‐pressure and high‐temperature experiments on mixtures of SiC and SiO2to explore the stability of SiC in the presence of oxygen‐rich silicates at planetary mantle conditions. We observe no evidence of the ambient pressure predicted oxidation products, CO or SiO, resulting from oxidation reactions between SiC and SiO2at pressures up to ~40 GPa and temperatures up to ~2500 K. We observe the decomposition of SiC through releasing C, resulting in vacancies in the SiC lattice and consequently the contracted SiC ambient volume V0observed in the heated regions of sample. The decomposition is further supported by the observations of diamond formation and the expanded SiO2V0in the heated regions of samples indicating the incorporation of C into SiO2stishovite. We provide a new interpretation of SiC decomposition on laboratory timescales, in which kinetics prevent the reaction from reaching equilibrium. We consider how the equilibrium decomposition reaction of SiC will influence the differentiation of a SiC‐containing body on planetary timescales and find that the decomposition products may become isolated during early planetary differentiation. The resulting presence of elemental Si and C within a planetary body may have important consequences for the compositions of the mantles and atmospheres of such planets.

     
    more » « less
  2. SiC and Ga 2 O 3 are promising wide band gap semiconductors for applications in power electronics because of their high breakdown electric field and normally off operation. However, lack of a suitable dielectric material that can provide high interfacial quality remains a problem. This can potentially lead to high leakage current and conducting loss. In this work, we present a novel atomic layer deposition process to grow epitaxially Mg x Ca 1− x O dielectric layers on 4H-SiC(0001) and β-Ga 2 O 3 $\left( {\bar 201} \right)$ substrates. By tuning the composition of Mg x Ca 1− x O toward the substrate lattice constant, better interfacial epitaxy can be achieved. The interfacial and epitaxy qualities were investigated and confirmed by cross-sectional transmission electron microscopy and X-ray diffraction studies. Mg 0.72 Ca 0.28 O film showed the highest epitaxy quality on 4H-SiC(0001) because of its closest lattice match with the substrate. Meanwhile, highly textured Mg 0.25 Ca 0.75 O films can be grown on β-Ga 2 O 3 $\left( {\bar 201} \right)$ with a preferred orientation of (111). 
    more » « less