Aluminum nitride (AlN) offers novel potential for electronic integration and performance benefits for high‐power, millimeter‐wave amplification. Herein, load‐pull power performance at 30 and 94 GHz for AlN/GaN/AlN high‐electron‐mobility transistors (HEMTs) on silicon carbide (SiC) is reported. When tuned for peak power‐added efficiency (PAE), the reported AlN/GaN/AlN HEMT shows PAE of 25% and 15%, with associated output power () of 2.5 and 1.7 W mm−1, at 30 and 94 GHz, respectively. At 94 GHz, the maximum generated is 2.2 W mm−1, with associated PAE of 13%.
- NSF-PAR ID:
- 10365842
- Publisher / Repository:
- Institute of Electrical and Electronics Engineers
- Date Published:
- Journal Name:
- IEEE Journal of the Electron Devices Society
- Volume:
- 9
- ISSN:
- 2168-6734
- Page Range / eLocation ID:
- p. 121-124
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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