Transparent microelectrodes have recently emerged as a promising approach for crosstalk‐free multifunctional electrical and optical biointerfacing. High‐performance flexible platforms that allow seamless integration with soft tissue systems for such applications are urgently needed. Here, silver nanowires (Ag NWs)‐based transparent microelectrode arrays (MEAs) and interconnects are designed to meet this demand. The nanowire networks exhibit a high optical transparency >90.0% at 550 nm, and superior mechanical stability up to 100,000 bending cycles at 5 mm radius. The Ag NWs microelectrodes preserve low normalized electrochemical impedance of 3.4–15 Ω cm2at 1 kHz, and the interconnects demonstrate excellent sheet resistance (
Chalcogenide resistive switches (RS), such as Ag2S, change resistance due to the growth of metallic filaments between electrodes along the electric field gradient. Therefore, they are candidates for neuromorphic and volatile memory applications. This work analyzed the RS of individual Ag2S nanowires (NWs) and extended the basic RS model to reproduce experimental observations. The work models resistivity of the device as a percolation of the conductive filaments. It also addressed continuous fluctuations of the resistivity with a stochastic change in volume fractions of the filaments in the device. As a result, these fluctuations cause unpredictable patterns in current-voltage characteristics and include a spontaneous change in resistance of the device during the linear sweep that conventional memristor models with constant resistivity cannot represent. The parameters of the presented stochastic model of a single Ag2S NW were fitted to the experimental data and reproduced key features of RS in the physical devices. Moreover, the model suggested a non-core shell structure of the Ag2S NWs. The outcome of this work is aimed to aid in simulating large self-assembled memristive networks and help to extend existing RS models.
more » « less- NSF-PAR ID:
- 10366695
- Publisher / Repository:
- Nature Publishing Group
- Date Published:
- Journal Name:
- Scientific Reports
- Volume:
- 12
- Issue:
- 1
- ISSN:
- 2045-2322
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract R sh) of 4.1–25 Ω sq−1. In vivo histological analysis reveals that the Ag NWs structures are biocompatible. Studies on Langendorff‐perfused mouse and rat hearts demonstrate that the Ag NWs MEAs enable high‐fidelity real‐time monitoring of heart rhythm during co‐localized optogenetic pacing and optical mapping. This proof‐of‐concept work illustrates that the solution‐processed, transparent, and flexible Ag NWs structures are a promising candidate for the next‐generation of large‐area multifunctional biointerfaces for interrogating complex biological systems in basic and translational research. -
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By mimicking biomimetic synaptic processes, the success of artificial intelligence (AI) has been astounding with various applications such as driving automation, big data analysis, and natural-language processing.[1-4] Due to a large quantity of data transmission between the separated memory unit and the logic unit, the classical computing system with von Neumann architecture consumes excessive energy and has a significant processing delay.[5] Furthermore, the speed difference between the two units also causes extra delay, which is referred to as the memory wall.[6, 7] To keep pace with the rapid growth of AI applications, enhanced hardware systems that particularly feature an energy-efficient and high-speed hardware system need to be secured. The novel neuromorphic computing system, an in-memory architecture with low power consumption, has been suggested as an alternative to the conventional system. Memristors with analog-type resistive switching behavior are a promising candidate for implementing the neuromorphic computing system since the devices can modulate the conductance with cycles that act as synaptic weights to process input signals and store information.[8, 9]
The memristor has sparked tremendous interest due to its simple two-terminal structure, including top electrode (TE), bottom electrode (BE), and an intermediate resistive switching (RS) layer. Many oxide materials, including HfO2, Ta2O5, and IGZO, have extensively been studied as an RS layer of memristors. Silicon dioxide (SiO2) features 3D structural conformity with the conventional CMOS technology and high wafer-scale homogeneity, which has benefited modern microelectronic devices as dielectric and/or passivation layers. Therefore, the use of SiO2as a memristor RS layer for neuromorphic computing is expected to be compatible with current Si technology with minimal processing and material-related complexities.
In this work, we proposed SiO2-based memristor and investigated switching behaviors metallized with different reduction potentials by applying pure Cu and Ag, and their alloys with varied ratios. Heavily doped p-type silicon was chosen as BE in order to exclude any effects of the BE ions on the memristor performance. We previously reported that the selection of TE is crucial for achieving a high memory window and stable switching performance. According to the study which compares the roles of Cu (switching stabilizer) and Ag (large switching window performer) TEs for oxide memristors, we have selected the TE materials and their alloys to engineer the SiO2-based memristor characteristics. The Ag TE leads to a larger memory window of the SiO2memristor, but the device shows relatively large variation and less reliability. On the other hand, the Cu TE device presents uniform gradual switching behavior which is in line with our previous report that Cu can be served as a stabilizer, but with small on/off ratio.[9] These distinct performances with Cu and Ag metallization leads us to utilize a Cu/Ag alloy as the TE. Various compositions of Cu/Ag were examined for the optimization of the memristor TEs. With a Cu/Ag alloying TE with optimized ratio, our SiO2based memristor demonstrates uniform switching behavior and memory window for analog switching applications. Also, it shows ideal potentiation and depression synaptic behavior under the positive/negative spikes (pulse train).
In conclusion, the SiO2memristors with different metallization were established. To tune the property of RS layer, the sputtering conditions of RS were varied. To investigate the influence of TE selections on switching performance of memristor, we integrated Cu, Ag and Cu/Ag alloy as TEs and compared the switch characteristics. Our encouraging results clearly demonstrate that SiO2with Cu/Ag is a promising memristor device with synaptic switching behavior in neuromorphic computing applications.
Acknowledgement This work was supported by the U.S. National Science Foundation (NSF) Award No. ECCS-1931088. S.L. and H.W.S. acknowledge the support from the Improvement of Measurement Standards and Technology for Mechanical Metrology (Grant No. 22011044) by KRISS.
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Phase change memory devices become practical for non-volatile storage at small dimensions due to reduced power and predictable device operation. In larger scale cells, devices can be locally melted due to filament formation and liquid filaments can be retained in parts of the cell for a long time even if most or all of the cells are initially amorphized during long fall-times. The complex amorphization and crystallization dynamics make these large cells more unpredictable and enable their applications as physically unclonable functions (PUF) [1,2]. Computational analysis of the complex amorphization-crystallization dynamics in phase change memory devices with large geometries is important to understand the evolution of phase distributions and temperature profiles during programming of these devices. In this work, we conduct electrothermal finite element simulations of reset operation on a large Ge2Sb2Te5 (GST) cell using the framework we have developed in COMSOL multiphysics [3]-[9] and analyze the complex dynamics of amorphization, nucleation and growth during electrical stress. We input voltage waveforms measured from electrical characterization of on-oxide GST line cells with bottom metal contact pads and Si3N4 capping. A 2D polycrystalline model of the experimentally measured cells (~360 nm wide, ~400 nm long and ~50 nm thick) is constructed in the simulations. Access devices are modeled using the spice models. The simulations capture some of the interplay between changes in the device resistance due to heating and phase changes and current fluctuations.more » « less
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Abstract A facile and general strategy is presented to create well‐defined heterojunctions with ultra‐small multimetallic sulfide nanoparticles (MMSNPs) uniformly coated on sliver nanowires. A unique aspect of this method is the atomic‐level pre‐integration of multimetallic components by exploiting recently developed supertetrahedral metal sulfide nanoclusters. The use of such nanoclusters also enables the convenient formation of the ultrathin interfacial Ag2S layer via etching. The heterojunctions (denoted as MMSNPs/Ag2S/Ag‐NWs) benefit from adjustable multimetallic components and display tunable visible‐light‐driven photocatalytic performance owing to the synergistic effect of multimetallic components from MMSNPs and the high carrier mobility of Ag‐NWs. The synthetic strategy opens new routes to designing and fabricating various heterojunctions with multimetallic components, which could further expand their applications in catalysis, electronics, and photonics.
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Abstract Oxide‐based resistive‐switching devices hold promise for solid‐state memory technology. Information encoding is accomplished by electrically switching the device between two nonvolatile states with low and high resistance states (LRS/HRS). It is generally accepted that the change between these states is due to the motion of oxygen vacancies forming a continuous (LRS) or gapped (HRS) filament between the electrodes. Direct assessments of filaments are rare due to their small size and the difficulty of locating the filament. Electron microscopy experiments reveal the filament structure and chemistry in TaO2.0 ± 0.2‐based 150 × 150 nm2devices with cross‐sectional geometry after forming with power dissipation lower than 1 mW. The filaments appear to be roughly hourglass‐shaped with a diameter of less than 10 nm and are composed of Ta‐rich and O‐poor mostly amorphous material with local compositions as Ta‐rich as TaO0.4. The as‐formed HRS has a gap up to 10 nm wide located next to the anode and composed of nearly stoichiometric TaO2.5. The tantalum and oxygen distribution is consistent with filaments formed by the motion of both Ta and O driven by temperature gradients (Soret effect) and an electric field. This interpretation points towards a new compact model of resistive‐switching devices.
