The seismic anisotropy of the Earth's solid inner core has been the topic of much research. It could be explained by the crystallographic preferred orientation (CPO) developing during convection. The likely phase is hexagonal close-packed iron (hcp), alloyed with nickel and some lighter elements. Here we use high energy synchrotron X-rays to study CPO in Fe-9wt%Si, uniaxially compressed in a diamond anvil cell in radial geometry. The experiments reveal that strong preferred orientation forms in the low-pressure body-centred cubic (bcc) phase that appears to be softer than pure iron. CPO is attributed to dominant {110}<111> slip. The onset of the bcc→hcp transition occurs at a pressure of ≈15 GPa, and the alloy remains in a two phase bcc + hcp state up to 40 GPa. The hcp phase forms first with a distinct {11$\bar{2}$0} maximum perpendicular to compression. Modelling shows that this is a transformation texture, which can be described by Burgers orientation relationship with variant selection. Experimental results suggest that bcc grains oriented with <100> parallel to compression transform into hcp first. The CPO of the hcp changes only slowly during further pressure and deviatoric stress increase at ambient temperature. After heating to 1600 K, a change in the hcp CPO is observed with alignment ofmore »
A multistep deposition technique is developed to produce highly oriented diamond films by hot filament chemical vapor deposition (HFCVD) on Si (111) substrates. The orientation is produced by use of a thin, 5–20 nm, Ni interlayer. Annealing studies demonstrate diffusion of Ni into Si to form nickel silicides with crystal structure depending on temperature. The HFCVD diamond film with Ni interlayer results in reduced non-diamond carbon, low surface roughness, high diamond crystal quality, and increased texturing relative to growth on bare silicon wafers. X-ray diffraction results show that the diamond film grown with 10 nm Ni interlayer yielded 92.5% of the diamond grains oriented along the (110) crystal planes with ~ 2.5 µm thickness and large average grain size ~ 1.45 µm based on scanning electron microscopy. Texture is also observed to develop for ~ 300 nm thick diamond films with ~ 89.0% of the grains oriented along the (110) crystal plane direction. These results are significantly better than diamond grown on Si (111) without Ni layer with the same HFCVD conditions. The oriented growth of diamond film on Ni interlayers is explained by a proposed model wherein the nano-diamond seeds becoming oriented relative to the β1-Ni3Si that forms during the diamond nucleation period. The model also explains the silicidation and diamond growth more »
High quality diamond film with minimum surface roughness and ~93% oriented grains along (110) crystallographic direction is grown on Si substrate using a thin 5 to 20 nm nickel layer. A detailed report on the formation of different phases of nickel silicide, its stability with different temperature, and its role for diamond film texturing at HFCVD growth condition is presented. A diamond growth model on Si substrate with Ni interlayer to grow high quality-oriented diamond film is established.
- Publication Date:
- NSF-PAR ID:
- 10368840
- Journal Name:
- SN Applied Sciences
- Volume:
- 4
- Issue:
- 8
- ISSN:
- 2523-3963
- Publisher:
- Springer Science + Business Media
- Sponsoring Org:
- National Science Foundation
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