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1. Ultrabroadband, few-cycle pulses directly from a Mamyshev fiber oscillator

   https://doi.org/10.1364/PRJ.8.000065  

   Ma, Chunyang ; Khanolkar, Ankita ; Zang, Yimin ; Chong, Andy ( December 2019 , Photonics Research)

   While the performance of mode-locked fiber lasers has been improved significantly, the limited gain bandwidth restricts them from generating ultrashort pulses approaching a few cycles or even shorter. Here we present a novel method to achieve few-cycle pulses ($\sim 5\text{cycles}$) with an ultrabroad spectrum ($\sim 400\mathrm{nm}$at$-20\mathrm{dB}$) from a Mamyshev oscillator configuration by inserting a highly nonlinear photonic crystal fiber and a dispersion delay line into the cavity. A dramatic intracavity spectral broadening can be stabilized by the unique nonlinear processes of a self-similar evolution as a nonlinear attractor in the gain fiber and a “perfect” saturable absorber action of the Mamyshev oscillator. To the best of our knowledge, this is the shortest pulse width and broadest spectrum directly generated from a fiber laser.

    

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2. Optical beam steering by using tunable, narrow-linewidth butt-coupled hybrid lasers in a silicon nitride photonics platform

   https://doi.org/10.1364/PRJ.382852  

   Zhu, Yeyu ; Zeng, Siwei ; Zhu, Lin ( February 2020 , Photonics Research)

   Chip-scale, tunable narrow-linewidth hybrid integrated diode lasers based on quantum-dot RSOAs at 1.3 μm are demonstrated through butt-coupling to a silicon nitride photonic integrated circuit. The hybrid laser linewidth is around 85 kHz, and the tuning range is around 47 nm. Then, a fully integrated beam steerer is demonstrated by combining the tunable diode laser with a waveguide surface grating. Our system can provide beam steering of 4.1° in one direction by tuning the wavelength of the hybrid laser. Besides, a wavelength-tunable triple-band hybrid laser system working at$\sim 1$,$\sim 1.3$, and$\sim 1.55\mathrm{\mu m}$bands is demonstrated for wide-angle beam steering in a single chip.

    

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3. Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure

   https://doi.org/10.1364/AO.394149  

   Velpula, Ravi_Teja ; Jain, Barsha ; Bui, Ha_Quoc_Thang ; Shakiba, Fatemeh_Mohammadi ; Jude, Jeffrey ; Tumuna, Moses ; Nguyen, Hoang-Duy ; Lenka, Trupti_Ranjan ; Nguyen, Hieu_Pham_Trung ( June 2020 , Applied Optics)

   This paper reports the illustration of electron blocking layer (EBL)-free AlGaN light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) wavelength at$\sim <\#comment/>270\mathrm{n}\mathrm{m}$. In this work, we demonstrated that the integration of an optimized thin undoped AlGaN strip layer in the middle of the last quantum barrier (LQB) could generate enough conduction band barrier height for the effectively reduced electron overflow into the$p\text{-}\mathrm{G}\mathrm{a}\mathrm{N}$region. Moreover, the hole injection into the multi-quantum-well active region is significantly increased due to a large hole accumulation at the interface of the AlGaN strip and the LQB. As a result, the internal quantum efficiency and output power of the proposed LED structure has been enhanced tremendously compared to that of the conventional$p\text{-}\mathrm{t}\mathrm{y}\mathrm{p}\mathrm{e}$EBL-based LED structure.

    

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4. Characterization of field-effect mobility at optical frequency by microring resonators

   https://doi.org/10.1364/PRJ.416656  

   Hsu, Wei-Che ; Li, Erwen ; Zhou, Bokun ; Wang, Alan X. ( March 2021 , Photonics Research)

   A novel characterization method is proposed to extract the optical frequency field-effect mobility (${\mu }_{\mathrm{op},\mathrm{FE}}$) of transparent conductive oxide (TCO) materials by a tunable silicon microring resonator with a heterogeneously integrated titanium-doped indium oxide$(\mathrm{ITiO})/{\mathrm{SiO}}_2/\mathrm{silicon}$metal–oxide–semiconductor (MOS) capacitor. By operating the microring in the accumulation mode, the quality factor and resonance wavelength shift are measured and subsequently used to derive the${\mu }_{\mathrm{op},\mathrm{FE}}$in the ultra-thin accumulation layer. Experimental results demonstrate that the${\mu }_{\mathrm{op},\mathrm{FE}}$of ITiO increases from 25.3 to$38.4{\mathrm{cm}}^2\text{⋅}{\mathrm{V}}^{-1}\text{⋅}{\mathrm{s}}^{-1}$with increasing gate voltages, which shows a similar trend as that at the electric frequency.

    

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5. Enhanced hole transport in AlGaN deep ultraviolet light-emitting diodes using a double-sided step graded superlattice electron blocking layer

   https://doi.org/10.1364/JOSAB.399773  

   Jain, Barsha ; Velpula, Ravi_Teja ; Velpula, Swetha ; Nguyen, Hoang-Duy ; Nguyen, Hieu_Pham_Trung ( August 2020 , Journal of the Optical Society of America B)

   In this paper, deep ultraviolet AlGaN light-emitting diodes (LEDs) with a novel double-sided step graded superlattice (DSGS) electron blocking layer (EBL) instead of a conventional EBL have been proposed for$\sim <\#comment/>254\mathrm{n}\mathrm{m}$wavelength emission. The enhanced carrier transport in the DSGS structure results in reduced electron leakage into the$p$-region, improved hole activation and hole injection, and enhanced output power and external quantum efficiency. The calculations show that output power of the DSGS structure is$\sim <\#comment/>3.56$times higher and electron leakage is$\sim <\#comment/>12$times lower, compared to the conventional structure. Moreover, the efficiency droop at 60 mA in the DSGS LED was found to be$\sim <\#comment/>9.1\mathrm{\%<\#comment/>}$, which is$\sim <\#comment/>4.5$times lower than the regular LED structure.

    

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