Lithium niobate on insulator (LNOI) waveguides, as an emerging technology, have proven to offer a promising platform for integrated optics, due to their strong optical confinement comparable to silicon on insulator (SOI) waveguides, while possessing the versatile properties of lithium niobate, such as high electro-optic coefficients. In this paper, we show that mode hybridization, a phenomenon widely found in vertically asymmetric waveguides, can be efficiently modulated in an LNOI ridge waveguide by electro-optic effect, leading to a polarization mode converter with 97% efficiency. Moreover, the proposed device does not require tapering or periodic poling, thereby greatly simplifying the fabrication process. It can also be actively switched by external fields. Such a platform facilitates technological progress of photonics circuits and sensors.
Electro optic modulators being key for many signal processing systems must adhere to requirements given by both electrical and optical constraints. Distinguishing between charge driven (CD) and field driven (FD) designs, we answer the question of whether fundamental performance benefits can be claimed of modulators based on emerging electro-optic materials. Following primary metrics, we compare the performance of emerging electro-optic and electro-absorption modulators such as graphene, transparent conductive oxides, and Si, based on charge injection with that of the ‘legacy’ FD modulators, such as those based on lithium niobate and quantum confined Stark effect. We show that for rather fundamental reasons and when considering energy and speed only, FD modulators always outperform CD ones in the conventional wavelength scale photonic waveguides. However, for waveguides featuring a sub-wavelength optical mode, such as those assisted by plasmonics, the emerging CD devices are indeed highly competitive especially for applications where component-density on-chip is a factor.
more » « less- NSF-PAR ID:
- 10369416
- Publisher / Repository:
- Optical Society of America
- Date Published:
- Journal Name:
- Optical Materials Express
- Volume:
- 12
- Issue:
- 5
- ISSN:
- 2159-3930
- Format(s):
- Medium: X Size: Article No. 1784
- Size(s):
- Article No. 1784
- Sponsoring Org:
- National Science Foundation
More Like this
-
more » « less
-
more » « less
Abstract Integrated electro-optic (EO) modulators are fundamental photonics components with utility in domains ranging from digital communications to quantum information processing. At telecommunication wavelengths, thin-film lithium niobate modulators exhibit state-of-the-art performance in voltage-length product (
V π L ), optical loss, and EO bandwidth. However, applications in optical imaging, optogenetics, and quantum science generally require devices operating in the visible-to-near-infrared (VNIR) wavelength range. Here, we realize VNIR amplitude and phase modulators featuringV π L ’s of sub-1 V ⋅ cm, low optical loss, and high bandwidth EO response. Our Mach-Zehnder modulators exhibit aV π L as low as 0.55 V ⋅ cm at 738 nm, on-chip optical loss of ~0.7 dB/cm, and EO bandwidths in excess of 35 GHz. Furthermore, we highlight the opportunities these high-performance modulators offer by demonstrating integrated EO frequency combs operating at VNIR wavelengths, with over 50 lines and tunable spacing, and frequency shifting of pulsed light beyond its intrinsic bandwidth (up to 7x Fourier limit) by an EO shearing method. -
more » « less
Integrated photonics at near-IR (NIR) wavelengths currently lacks high bandwidth and low-voltage modulators, which add electro-optic functionality to passive circuits. Here, integrated hybrid thin-film lithium niobate (TFLN) electro-optic Mach–Zehnder modulators (MZM) are shown, using TFLN bonded to planarized silicon nitride waveguides. The design does not require TFLN etching or patterning. The push–pull MZM achieves a half-wave voltage length product (
V π L ) of 0.8 V.cm at 784 nm. MZM devices with 0.4 cm and 0.8 cm modulation length show a broadband electro-optic response with a 3 dB bandwidth beyond 100 GHz, with the latter showing a record bandwidth to half-wave voltage ratio of 100 GHz/V and a high extinction ratio exceeding 30 dB. Such fully integrated high-performance NIR electro-optic devices may benefit data communications, analog signal processing, test and measurement instrumentation, quantum information processing and other applications. -
more » « less
Abstract Modern advanced photonic integrated circuits require dense integration of high-speed electro-optic functional elements on a compact chip that consumes only moderate power. Energy efficiency, operation speed, and device dimension are thus crucial metrics underlying almost all current developments of photonic signal processing units. Recently, thin-film lithium niobate (LN) emerges as a promising platform for photonic integrated circuits. Here, we make an important step towards miniaturizing functional components on this platform, reporting high-speed LN electro-optic modulators, based upon photonic crystal nanobeam resonators. The devices exhibit a significant tuning efficiency up to 1.98 GHz V−1, a broad modulation bandwidth of 17.5 GHz, while with a tiny electro-optic modal volume of only 0.58
μ m3. The modulators enable efficient electro-optic driving of high-Q photonic cavity modes in both adiabatic and non-adiabatic regimes, and allow us to achieve electro-optic switching at 11 Gb s−1with a bit-switching energy as low as 22 fJ. The demonstration of energy efficient and high-speed electro-optic modulation at the wavelength scale paves a crucial foundation for realizing large-scale LN photonic integrated circuits that are of immense importance for broad applications in data communication, microwave photonics, and quantum photonics. -
more » « less
Electro-optic modulators (EOMs) convert signals from the electrical to the optical domain. They are at the heart of optical communication, microwave signal processing, sensing, and quantum technologies. Next-generation EOMs require high-density integration, low cost, and high performance simultaneously, which are difficult to achieve with established integrated photonics platforms. Thin-film lithium niobate (LN) has recently emerged as a strong contender owing to its high intrinsic electro-optic (EO) efficiency, industry-proven performance, robustness, and, importantly, the rapid development of scalable fabrication techniques. The thin-film LN platform inherits nearly all the material advantages from the legacy bulk LN devices and amplifies them with a smaller footprint, wider bandwidths, and lower power consumption. Since the first adoption of commercial thin-film LN wafers only a few years ago, the overall performance of thin-film LN modulators is already comparable with, if not exceeding, the performance of the best alternatives based on mature platforms such as silicon and indium phosphide, which have benefited from many decades of research and development. In this mini-review, we explain the principles and technical advances that have enabled state-of-the-art LN modulator demonstrations. We discuss several approaches, their advantages and challenges. We also outline the paths to follow if LN modulators are to improve further, and we provide a perspective on what we believe their performance could become in the future. Finally, as the integrated LN modulator is a key subcomponent of more complex photonic functionalities, we look forward to exciting opportunities for larger-scale LN EO circuits beyond single components.
