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1. High-Contrast Plasmonic-Enhanced Shallow Spin Defects in Hexagonal Boron Nitride for Quantum Sensing

   https://doi.org/10.1021/acs.nanolett.1c02495  

   Gao, Xingyu; Jiang, Boyang; Llacsahuanga Allcca, Andres E.; Shen, Kunhong; Sadi, Mohammad A.; Solanki, Abhishek B.; Ju, Peng; Xu, Zhujing; Upadhyaya, Pramey; Chen, Yong P.; et al (September 2021, Nano Letters)

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   The recently discovered spin defects in hexagonal boron nitride (hBN), a layered van der Waals material, have great potential in quantum sensing. However, the photoluminescence and the contrast of the optically detected magnetic resonance (ODMR) of hBN spin defects are relatively low so far, which limits their sensitivity. Here we report a record-high ODMR contrast of 46% at room temperature and simultaneous enhancement of the photoluminescence of hBN spin defects by up to 17-fold by the surface plasmon of a gold film microwave waveguide. Our results are obtained with shallow boron vacancy spin defects in hBN nanosheets created by low-energy He+ ion implantation and a gold film microwave waveguide fabricated by photolithography. We also explore the effects of microwave and laser powers on the ODMR and improve the sensitivity of hBN spin defects for magnetic field detection. Our results support the promising potential of hBN spin defects for nanoscale quantum sensing. 

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2. Single nuclear spin detection and control in a van der Waals material

   https://doi.org/10.1038/s41586-025-09258-7  

   Gao, Xingyu; Vaidya, Sumukh; Li, Kejun; Ge, Zhun; Dikshit, Saakshi; Zhang, Shimin; Ju, Peng; Shen, Kunhong; Jin, Yuanbin; Ping, Yuan; et al (July 2025, Nature)

   Abstract Optically active spin defects in solids^1,2are leading candidates for quantum sensing^3,4and quantum networking^5,6. Recently, single spin defects were discovered in hexagonal boron nitride (hBN)^7–11, a layered van der Waals (vdW) material. Owing to its two-dimensional structure, hBN allows spin defects to be positioned closer to target samples than in three-dimensional crystals, making it ideal for atomic-scale quantum sensing¹², including nuclear magnetic resonance (NMR) of single molecules. However, the chemical structures of these defects^7–11remain unknown and detecting a single nuclear spin with a hBN spin defect has been elusive. Here we report the creation of single spin defects in hBN using¹³C ion implantation and the identification of three distinct defect types based on hyperfine interactions. We observed bothS = 1/2 andS = 1 spin states within a single hBN spin defect. We demonstrated atomic-scale NMR and coherent control of individual nuclear spins in a vdW material, with a π-gate fidelity up to 99.75% at room temperature. By comparing experimental results with density functional theory (DFT) calculations, we propose chemical structures for these spin defects. Our work advances the understanding of single spin defects in hBN and provides a pathway to enhance quantum sensing using hBN spin defects with nuclear spins as quantum memories. 

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3. Isotope engineering for spin defects in van der Waals materials

   https://doi.org/10.1038/s41467-023-44494-3  

   Gong, Ruotian; Du, Xinyi; Janzen, Eli; Liu, Vincent; Liu, Zhongyuan; He, Guanghui; Ye, Bingtian; Li, Tongcang; Yao, Norman Y; Edgar, James H; et al (December 2024, Nature Communications)

   Abstract Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ($${{{{{{{{\rm{V}}}}}}}}}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ $V_B^{-}$) in hexagonal boron nitride (hBN), we grow isotopically purified h¹⁰B¹⁵N crystals. Compared to$${{{{{{{{\rm{V}}}}}}}}}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ $V_B^{-}$in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded$${{{{{{{{\rm{V}}}}}}}}}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ $V_B^{-}$spin transitions as well as extended coherence timeT₂and relaxation timeT₁. For quantum sensing,$${{{{{{{{\rm{V}}}}}}}}}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ $V_B^{-}$centers in our h¹⁰B¹⁵N samples exhibit a factor of 4 (2) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the$${{{{{{{{\rm{V}}}}}}}}}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ $V_B^{-}$hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor¹⁵N nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials. 

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4. Sensing spin wave excitations by spin defects in few-layer-thick hexagonal boron nitride

   https://doi.org/10.1126/sciadv.adk8495  

   Zhou, Jingcheng; Lu, Hanyi; Chen, Di; Huang, Mengqi; Yan, Gerald Q; Al-matouq, Faris; Chang, Jiu; Djugba, Dziga; Jiang, Zhigang; Wang, Hailong; et al (May 2024, Science Advances)

   Optically active spin defects in wide bandgap semiconductors serve as a local sensor of multiple degrees of freedom in a variety of “hard” and “soft” condensed matter systems. Taking advantage of the recent progress on quantum sensing using van der Waals (vdW) quantum materials, here we report direct measurements of spin waves excited in magnetic insulator Y₃Fe₅O₁₂(YIG) by boron vacancy $V_{\mathrm{B}}^{-}$spin defects contained in few-layer-thick hexagonal boron nitride nanoflakes. We show that the ferromagnetic resonance and parametric spin excitations can be effectively detected by $V_{\mathrm{B}}^{-}$spin defects under various experimental conditions through optically detected magnetic resonance measurements. The off-resonant dipole interaction between YIG magnons and $V_{\mathrm{B}}^{-}$spin defects is mediated by multi-magnon scattering processes, which may find relevant applications in a range of emerging quantum sensing, computing, and metrology technologies. Our results also highlight the opportunities offered by quantum spin defects in layered two-dimensional vdW materials for investigating local spin dynamic behaviors in magnetic solid-state matters. 

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5. Exchange Bias Between van der Waals Materials: Tilted Magnetic States and Field‐Free Spin–Orbit‐Torque Switching

   https://doi.org/10.1002/adma.202305739  

   Cham, Thow_Min_Jerald; Dorrian, Reiley_J; Zhang, Xiyue_S; Dismukes, Avalon_H; Chica, Daniel_G; May, Andrew_F; Roy, Xavier; Muller, David_A; Ralph, Daniel_C; Luo, Yunqiu_Kelly (January 2024, Advanced Materials)

   Abstract Magnetic van der Waals heterostructures provide a unique platform to study magnetism and spintronics device concepts in the 2D limit. Here, studies of exchange bias from the van der Waals antiferromagnet CrSBr acting on the van der Waals ferromagnet Fe₃GeTe₂(FGT) are reported. The orientation of the exchange bias is along the in‐plane easy axis of CrSBr, perpendicular to the out‐of‐plane anisotropy of the FGT, inducing a strongly tilted magnetic configuration in the FGT. Furthermore, the in‐plane exchange bias provides sufficient symmetry breaking to allow deterministic spin–orbit torque switching of the FGT in CrSBr/FGT/Pt samples at zero applied magnetic field. A minimum thickness of the CrSBr of >10 nm is needed to provide a non‐zero exchange bias at 30 K. 

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