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The first in situ quantitative synchrotron X-ray diffraction (XRD) study of plastic strain-induced phase transformation (PT) has been performed on $$\alpha-\omega$$ PT in ultra-pure, strongly plastically predeformed Zr as an example, under different compression-shear pathways in rotational diamond anvil cell (RDAC). Radial distributions of pressure in each phase and in the mixture, and concentration of $$\omega$$-Zr, all averaged over the sample thickness, as well as thickness profile were measured. The minimum pressure for the strain-induced $$\alpha-\omega$$ PT, $$p^d_{\varepsilon}$$=1.2 GPa, is smaller than under hydrostatic loading by a factor of 4.5 and smaller than the phase equilibrium pressure by a factor of 3; it is independent of the compression-shear straining path. The theoretically predicted plastic strain-controlled kinetic equation was verified and quantified; it is independent of the pressure-plastic strain loading path and plastic deformation at pressures below $$p^d_{\varepsilon}$$. Thus, strain-induced PTs under compression in DAC and torsion in RDAC do not fundamentally differ. The yield strength of both phases is estimated using hardness and x-ray peak broadening; the yield strength in shear is not reached by the contact friction stress and cannot be evaluated using the pressure gradient. Obtained results open a new opportunity for quantitative study of strain-induced PTs and reactions with applications to material synthesis and processing, mechanochemistry, and geophysics.
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Atomistic deformation mechanism of silicon under laser-driven shock compression
Abstract Silicon (Si) is one of the most abundant elements on Earth, and it is the most widely used semiconductor. Despite extensive study, some properties of Si, such as its behaviour under dynamic compression, remain elusive. A detailed understanding of Si deformation is crucial for various fields, ranging from planetary science to materials design. Simulations suggest that in Si the shear stress generated during shock compression is released via a high-pressure phase transition, challenging the classical picture of relaxation via defect-mediated plasticity. However, direct evidence supporting either deformation mechanism remains elusive. Here, we use sub-picosecond, highly-monochromatic x-ray diffraction to study (100)-oriented single-crystal Si under laser-driven shock compression. We provide the first unambiguous, time-resolved picture of Si deformation at ultra-high strain rates, demonstrating the predicted shear release via phase transition. Our results resolve the longstanding controversy on silicon deformation and provide direct proof of strain rate-dependent deformation mechanisms in a non-metallic system.
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- Award ID(s):
- 2049620
- PAR ID:
- 10372028
- Publisher / Repository:
- Nature Publishing Group
- Date Published:
- Journal Name:
- Nature Communications
- Volume:
- 13
- Issue:
- 1
- ISSN:
- 2041-1723
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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