skip to main content


Title: High‐Performance Directly Patterned Nanograting Perovskite Photodetector with Interdigitated Electrodes
Abstract

Solution‐processed organic–inorganic metal halide perovskites have recently attracted tremendous attention in the photodetector community due to their excellent optoelectronic properties and facile fabrication. The main challenge in perovskite photodetectors (PSPDs) is to achieve high responsivity and fast speed simultaneously. In this work, this challenge is overcome by employing a directly patterned nanograting methylammonium lead iodide (MAPbI3) film in metal‐semiconductor‐metal (MSM) PSPD on interdigitated indium tin oxide (ITO) electrodes. Because of the improved perovskite morphology after directly patterning by nanoimprint lithography, as well as the enhanced electric field intensity by the perovskite nanograting and interdigitated electrodes, the PSPDs have responsivity of 441 A W−1, detectivity of 8.32 × 1012Jones, response time of 10.7 µs, all of which are among the best performances in MSM PSPDs. Moreover, the PSPDs maintain excellent photocurrent performance after 20 days of air exposure. The approach opens a path to manufacturing‐friendly, high‐performance, and reliable PSPDs and paves the way toward perovskite‐based optoelectronic circuits.

 
more » « less
PAR ID:
10375918
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  ;  ;  
Publisher / Repository:
Wiley Blackwell (John Wiley & Sons)
Date Published:
Journal Name:
Advanced Optical Materials
Volume:
10
Issue:
24
ISSN:
2195-1071
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. In this paper, high-performance UV photodetectors have been demonstrated based on indium oxide (In2O3) thin films of approximately 1.5–2 μm thick, synthesized by a simple and quick plasma sputtering deposition approach. After the deposition, the thin-film surface was treated with 4–5 nm-sized platinum (Pt) nanoparticles. Then, titanium metal electrodes were deposited onto the sample surface to form a metal–semiconductor–metal (MSM) photodetector of 50 mm2 in size. Raman scattering spectroscopy and scanning electron microscope (SEM) were used to study the crystal structure of the synthesized In2O3 film. The nanoplasmonic enhanced In2O3-based UV photodetectors were characterized by various UV wavelengths at different radiation intensities and temperatures. A high responsivity of up to 18 A/W was obtained at 300 nm wavelength when operating at 180 °C. In addition, the fabricated prototypes show a thermally stable baseline and excellent repeatability to a wide range of UV lights with low illumination intensity when operating at such a high temperature.

     
    more » « less
  2. Abstract

    All‐inorganic perovskite quantum dots (IPQDs) are a promising material for use in various optoelectronic devices due to their excellent optoelectronic properties and high environmental stability. Here, a high‐performance phototransistor based on a layered heterojunction composed of CsPbI3QDs and a narrow‐bandgap conjugated polymer DPP‐DTT is reported, which shows a high responsivity of 110 A W−1, a specific detectivity of 2.9 × 1013Jones and a light to dark current ratio up to 6 × 103. The heterojunction phototransistor exhibits unipolar p‐type and gate bias modulated behaviors. In addition, the device exhibits a broad spectral detection range from ultraviolet to near infrared. The high sensitivity of the device is attributed to the layered heterojunction and the gate bias modulation property. The work overcomes the existing limitations in sensitivity of IPQD photodetectors due to the poor charge transport between QDs. The convenient solution‐processed fabrication and excellent device performance especially suggest the IPQD/narrow‐bandgap conjugate polymer heterojunction as a promising structure for potential applications of ultrasensitive broadband photodetectors compatible with a wide variety of substrates.

     
    more » « less
  3.  
    more » « less
  4. Abstract

    Single crystal perovskite microplates are fundamentally and technologically very important to developing high‐order (n≥ 3) multiphoton excitation. This study reports the preparation of high‐quality single crystal perovskite microplates through the controlled release of lead ions from the confined species within a metal–organic framework. The resulting free‐standing MAPbBr3(MA = CH3NH3+) and CsPbBr3single crystals of rectangular microplates exhibit excellent multiphoton excitation behaviors, as demonstrated in their five‐photon‐excited photoluminescence and three‐photon‐pumped stimulated emission with the threshold of 159 mJ cm−2, providing the promise of exploring high‐quality single crystal perovskite microplates for functional optoelectronic and photonics applications.

     
    more » « less
  5. Abstract

    A simple room‐temperature process of depositing MXene on a III‐V structure with embedded 2D electron gas (2DEG) is used, which results in a large area, , photodetector (PD) device that greatly outperforms vacuum deposited Ti/Au metal‐semiconductor‐metal (MSM) PD's. By co‐optimizing properties of 2D MXene contacts and the III‐V material heterojunctions, this device sets new operating records with responsivity up to 1.04 A W1at low optical powers, corresponding to >230% internal quantum efficiency, dark current of 50 , >105.6‐dB dynamic range, and 25–150 ps response time, which improves the previous MXene‐Semiconductor‐MXene responsivity by >2.7 times and is 7 × 103–−106times faster compared to other MXene‐based PDs. This is achieved by enhancing the Schottky barrier height by forming a Van der Waals (vdW) heterojunction between a wide bandgap AlGaAs surface layer and spin coatedTi3C2Tzelectrodes. A layered architecture transports the optically generated electrons to a 2DEG channel at the GaAs/AlGaAs heterointerface, where they are rapidly collected. The landscaped electric field pushes the slow holes to an underlying low temperature‐grown GaAs (LT‐GaAs) region where they recombine. The proposed Schottky‐2DEG Photoconductor‐Schottky model for device operation shows how this device circumvents the canonical limitations of gain‐bandwidth product, and carrier transit time, while replacing the need for vacuum deposition of gold or other precious metals.

     
    more » « less