Ultrafast optical switching in plasmonic platforms relies on the third‐order Kerr nonlinearity, which is tightly linked to the dynamics of hot carriers in nanostructured metals. Although extensively utilized, a fundamental understanding on the dependence of the switching dynamics upon optical resonances has often been overlooked. Here, all‐optical control of resonance bands in a hybrid photonic‐plasmonic crystal is employed as an empowering technique for probing the resonance‐dependent switching dynamics upon hot carrier formation. Differential optical transmission measurements reveal an enhanced switching performance near the anti‐crossing point arising from strong coupling between local and nonlocal resonance modes. Furthermore, entangled with hot‐carrier dynamics, the nonlinear correspondence between optical resonances and refractive index change results in tailorable dispersion of recovery speeds which can notably deviate from the characteristic lifetime of hot carriers. The comprehensive understanding provides new protocols for optically characterizing hot‐carrier dynamics and optimizing resonance‐based all‐optical switches for operations across the visible spectrum.
Semiconductor photoconductive switches are useful and versatile emitters of terahertz (THz) radiation with a broad range of applications in THz imaging and time-domain spectroscopy. One fundamental challenge for achieving efficient ultrafast switching, however, is the relatively long carrier lifetime in most common semiconductors. To obtain picosecond ultrafast pulses, especially when coupled with waveguides/transmission lines, semiconductors are typically engineered with high defect density to reduce the carrier lifetimes, which in turn lowers the overall power output of the photoconductive switches. To overcome this fundamental trade-off, here we present a new hybrid photoconductive switch design by engineering a hot-carrier fast lane using graphene on silicon. While photoexcited carriers are generated in the silicon layer, similar to a conventional switch, the hot carriers are transferred to the graphene layer for efficient collection at the contacts. As a result, the graphene-silicon hybrid photoconductive switch emits THz fields with up to 80 times amplitude enhancement compared to its graphene-free counterpart. These results both further the understanding of ultrafast hot carrier transport in such hybrid systems and lay the groundwork toward intrinsically more powerful THz devices based on 2D-3D hybrid heterostructures.
more » « less- NSF-PAR ID:
- 10377473
- Publisher / Repository:
- Nature Publishing Group
- Date Published:
- Journal Name:
- Nature Communications
- Volume:
- 13
- Issue:
- 1
- ISSN:
- 2041-1723
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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