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1. Discovery of a layered multiferroic compound Cu _1−x Mn _1+y SiTe ₃ with strong magnetoelectric coupling

   https://doi.org/10.1126/sciadv.adp9379  

   De, Chandan; Liu, Yu; Ayyagari, Sai_Venkata Gayathri; Zheng, Boyang; Kelley, Kyle P; Hazra, Sankalpa; He, Jingyang; Pawledzio, Sylwia; Mali, Subin; Guchhait, Samaresh; et al (January 2025, Science Advances)

   Multiferroic materials host both ferroelectricity and magnetism, offering potential for magnetic memory and spin transistor applications. Here, we report a multiferroic chalcogenide semiconductor Cu_1−xMn_1+ySiTe₃(0.04 ≤x≤ 0.26; 0.03 ≤y≤ 0.15), which crystallizes in a polar monoclinic structure (Pmspace group). It exhibits a canted antiferromagnetic state below 35 kelvin, with magnetic hysteresis and remanent magnetization under 15 kelvin. We demonstrate multiferroicity and strong magnetoelectric coupling through magnetodielectric and magnetocurrent measurements. At 10 kelvin, the magnetically induced electric polarization reaches ~0.8 microcoulombs per square centimeter, comparable to the highest value in oxide multiferroics. We also observe possible room-temperature ferroelectricity. Given that multiferroicity is very rare among transition metal chalcogenides, our finding sets up a unique materials platform for designing multiferroic chalcogenides. 

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2. Systematic Trends of Transformation Temperatures and Crystal Structure of Ni–Mn–Ga–Fe–Cu Alloys

   https://doi.org/10.1007/s40830-020-00273-3  

   Armstrong, Andrew; Nilsen, Frans; Rames, Michal; Colman, Ross; Vertat, Petr; Kmjec, Tomas; Straka, Ladislav; Mullner, Peter; Heczko, Oleg (March 2020, Shape memory and superelasticity)

   Here we report a systematic research on effects of Fe and Cu upon properties relevant for the magnetic shape memory effect of Ni–Mn–Ga ferromagnetic shape memory alloys. Fe and Cu were identified as elements with potential synergism to increase the martensite transformation temperature of Ni–Mn–Ga magnetic shape memory (MSM) alloys. Eighteen Ni–Mn–Ga–Fe–Cu alloys with different systematic trends in substituting the ternary elements with Cu and Fe have been investigated. We found a method to describe the effectiveness of Ni, Mn, and Cu upon raising the martensitic transformation temperature, lowering the saturation magnetization, and varying the Curie temperature. We find the martensite transformation temperature most influenced by the Ni content, followed by Mn, with a smaller effect of Cu. The saturation magnetization decreases with similar coefficients for Mn and Cu alloying. The Curie temperature monotonously decreases with Mn, but not Cu. The 10M martensite structure is stable for the composition Ni46.5Mn25?XGa25-X-YFe3.5CuY with X and Y range of 0–5.7, and 0.8–3.0. Used in combination with the total e/a, the elemental e/a-ratio gives some insight into the complex behavior of quinary MSM alloys and is a useful method of analyzing MSM alloys for improved functional properties. 

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3. Si doping in MOCVD grown (010) β-(Al _x Ga _1−x ) ₂ O ₃ thin films

   https://doi.org/10.1063/5.0084062  

   Bhuiyan, A. F.; Feng, Zixuan; Meng, Lingyu; Fiedler, Andreas; Huang, Hsien-Lien; Neal, Adam T.; Steinbrunner, Erich; Mou, Shin; Hwang, Jinwoo; Rajan, Siddharth; et al (April 2022, Journal of Applied Physics)

   In this work, the structural and electrical properties of metalorganic chemical vapor deposited Si-doped β-(Al x Ga 1−x ) 2 O 3 thin films grown on (010) β-Ga 2 O 3 substrates are investigated as a function of Al composition. The room temperature Hall mobility of 101 cm 2 /V s and low temperature peak mobility (T = 65 K) of 1157 cm 2 /V s at carrier concentrations of 6.56 × 10 17 and 2.30 × 10 17  cm −3 are measured from 6% Al composition samples, respectively. The quantitative secondary ion mass spectroscopy (SIMS) characterization reveals a strong dependence of Si and other unintentional impurities, such as C, H, and Cl concentrations in β-(Al x Ga 1−x ) 2 O 3 thin films, with different Al compositions. Higher Al compositions in β-(Al x Ga 1−x ) 2 O 3 result in lower net carrier concentrations due to the reduction of Si incorporation efficiency and the increase of C and H impurity levels that act as compensating acceptors in β-(Al x Ga 1−x ) 2 O 3 films. Lowering the growth chamber pressure reduces Si concentrations in β-(Al x Ga 1−x ) 2 O 3 films due to the increase of Al compositions as evidenced by comprehensive SIMS and Hall characterizations. Due to the increase of lattice mismatch between the epifilm and substrate, higher Al compositions lead to cracking in β-(Al x Ga 1−x ) 2 O 3 films grown on β-Ga 2 O 3 substrates. The (100) cleavage plane is identified as a major cracking plane limiting the growth of high-quality Si-doped (010) β-(Al x Ga 1−x ) 2 O 3 films beyond the critical thicknesses, which leads to highly anisotropic and inhomogeneous behaviors in terms of conductivity. 

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4. A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga ₂ O ₃ , Al ₂ O ₃ , In ₂ O ₃ , ZnO, SnO ₂ , CdO, NiO, CuO, and Sc ₂ O ₃

   https://doi.org/10.1063/5.0078037  

   Spencer, Joseph A.; Mock, Alyssa L.; Jacobs, Alan G.; Schubert, Mathias; Zhang, Yuhao; Tadjer, Marko J. (March 2022, Applied Physics Reviews)

   This Review highlights basic and transition metal conducting and semiconducting oxides. We discuss their material and electronic properties with an emphasis on the crystal, electronic, and band structures. The goal of this Review is to present a current compilation of material properties and to summarize possible uses and advantages in device applications. We discuss Ga 2 O 3 , Al 2 O 3 , In 2 O 3 , SnO 2 , ZnO, CdO, NiO, CuO, and Sc 2 O 3 . We outline the crystal structure of the oxides, and we present lattice parameters of the stable phases and a discussion of the metastable polymorphs. We highlight electrical properties such as bandgap energy, carrier mobility, effective carrier masses, dielectric constants, and electrical breakdown field. Based on literature availability, we review the temperature dependence of properties such as bandgap energy and carrier mobility among the oxides. Infrared and Raman modes are presented and discussed for each oxide providing insight into the phonon properties. The phonon properties also provide an explanation as to why some of the oxide parameters experience limitations due to phonon scattering such as carrier mobility. Thermal properties of interest include the coefficient of thermal expansion, Debye temperature, thermal diffusivity, specific heat, and thermal conductivity. Anisotropy is evident in the non-cubic oxides, and its impact on bandgap energy, carrier mobility, thermal conductivity, coefficient of thermal expansion, phonon modes, and carrier effective mass is discussed. Alloys, such as AlGaO, InGaO, (Al x In y Ga 1− x− y ) 2 O 3 , ZnGa 2 O 4 , ITO, and ScGaO, were included where relevant as they have the potential to allow for the improvement and alteration of certain properties. This Review provides a fundamental material perspective on the application space of semiconducting oxide-based devices in a variety of electronic and optoelectronic applications. 

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5. The impact of site selectivity and disorder on the thermoelectric properties of Yb ₂₁ Mn ₄ Sb ₁₈ solid solutions: Yb ₂₁ Mn _4−x Cd _x Sb ₁₈ and Yb _21−y Ca _y Mn ₄ Sb ₁₈

   https://doi.org/10.1039/d1ma00497b  

   He, Allan; Cerretti, Giacomo; Kauzlarich, Susan M. (August 2021, Materials Advances)

   Thermoelectric materials can convert heat into electricity. They are used to generate electricity when other power sources are not available or to increase energy efficiency by recycling waste heat. The Yb 21 Mn 4 Sb 18 phase was previously shown to have good thermoelectric performance due to its large Seebeck coefficient (∼290 μV K −1 ) and low thermal conductivity (0.4 W m −1 K −1 ). These characteristics stem respectively from the unique [Mn 4 Sb 10 ] 22− subunit and the large unit cell/site disorder inherent in this phase. The solid solutions, Yb 21 Mn 4− x Cd x Sb 18 ( x = 0, 0.5, 1.0, 1.5) and Yb 21− y Ca y Mn 4 Sb 18 ( y = 3, 6, 9, 10.5) have been prepared, their structures characterized and thermoelectric properties from room temperature to 800 K measured. A detailed look into the structural disorder for the Cd and Ca solid solutions was performed using synchrotron powder X-ray diffraction and pair distribution function methods and shows that these are highly disordered structures. The substitution of Cd gives rise to more metallic behavior whereas Ca substitution results in high resistivity. As both Cd and Ca are isoelectronic substitutions, the changes in properties are attributed to changes in the electronic structure. Both solid solutions show that the thermal conductivities remain extremely low (∼0.4 W m −1 K −1 ) and that the Seebeck coefficients remain high (>200 μV K −1 ). The temperature dependence of the carrier mobility with increased Ca substitution, changing from approximately T −1 to T −0.5 , suggests that another scattering mechanism is being introduced. As the bonding changes from polar covalent with Yb to ionic for Ca, polar optical phonon scattering becomes the dominant mechanism. Experimental studies of the Cd solid solutions result in a max zT of ∼1 at 800 K and, more importantly for application purposes, a ZT avg ∼ 0.6 from 300 K to 800 K. 

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