A transparent indium tin oxide (ITO) contact to bulk n-GaN and n-GaN thin film on c-face sapphire with a specific contact resistivity of 8.06 × 10−4Ω.cm2and 3.71 × 10−4Ω.cm2was measured, respectively. Our studies relied on an RF sputtering system for ITO deposition. We have investigated the formation of the ITO-based contacts on untreated and plasma treated samples. A nonlinear
- NSF-PAR ID:
- 10382571
- Publisher / Repository:
- The Electrochemical Society
- Date Published:
- Journal Name:
- ECS Journal of Solid State Science and Technology
- Volume:
- 11
- Issue:
- 11
- ISSN:
- 2162-8769
- Page Range / eLocation ID:
- Article No. 115008
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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