A microfluidic thermal mass flow sensor based on planar micro-machining technology and a phase-change material is designed, fabricated, and characterized. The sensor configuration uses a small patch of vanadium dioxide (VO 2 ) thin film as the sensing element closely placed in the down streaming direction of the heat source. By operating the VO 2 sensor in the phase transition region, no thermal insulation structure is required due to the ultra-high thermal sensitivity in this region. The characteristic 3-order resistance change, from 290 kΩ to 290 Ω, is observed during the full heating and cooling cycles by using both substrate heating and resistive heating methods. The equivalent maximum temperature coefficient of resistance (TCR) is calculated to be −0.37 K −1 in the cooling cycle and −0.43 K −1 in the cooling and heating cycle, respectively. The sensing operation principle is determined to follow the major cooling curve to avoid falling into minor loops and to secure high TCR. The resistance of VO 2 is monitored under flow rates ranging from 0 to 37.8 μL s −1 with the maximum sensitivity of 1.383%/(μL min −1 ). The studies presented in this research may enable the application of utilizing nonlinear metamaterial in microfluidic flow sensors with orders of magnitude improvement in sensitivity.
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Antenna-coupled microbolometer based on VO 2 's non-linear properties across the metal–insulator transition region
This paper presents an antenna-coupled non-linear vanadium dioxide (VO 2 ) microbolometer operating in the non-linear metal–insulator transition (MIT) region with an ultra-high responsivity of 6.55 × 10 4 V/W. Sputtered VO 2 films used in this device exhibit 10 4 times change in resistivity between the dielectric and conductive states. The VO 2 microbolometer is coupled to a wideband dipole antenna operating at 31–55 GHz and a coplanar waveguide for probed measurement. To enhance the sensitivity, the sensor is suspended in air by micro-electro-mechanical systems process. The large thermal coefficient of resistance of VO 2 is utilized by DC biasing the device in the MIT region. Measurements for the fabricated sensor were performed, and a high responsivity was demonstrated, owing to non-linear conductivity change in the transition region. The measured sensitivity is >10 2 times higher than the state-of-the-art sensors. In addition, the concept of utilizing the proposed VO 2 sensor in a mmWave imager was demonstrated by the radiation pattern measurement of a 4 × 4 (16 elements) antenna-coupled VO 2 sensor array. The results presented in this work reveal the initial step to employ VO 2 's MIT for a hyper-sensitive sensor in future mmWave sensing and imaging applications.
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- Award ID(s):
- 2149886
- PAR ID:
- 10383391
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 121
- Issue:
- 20
- ISSN:
- 0003-6951
- Page Range / eLocation ID:
- 201901
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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