Park, Yongmo, Wang, Ziyu, Yoo, Sangmin, and Lu, Wei D. RM-NTT: An RRAM-Based Compute-in-Memory Number Theoretic Transform Accelerator. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 8.2 Web. doi:10.1109/JXCDC.2022.3202517.

Park, Yongmo, Wang, Ziyu, Yoo, Sangmin, & Lu, Wei D. RM-NTT: An RRAM-Based Compute-in-Memory Number Theoretic Transform Accelerator. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 8 (2). https://doi.org/10.1109/JXCDC.2022.3202517

Park, Yongmo, Wang, Ziyu, Yoo, Sangmin, and Lu, Wei D. "RM-NTT: An RRAM-Based Compute-in-Memory Number Theoretic Transform Accelerator". IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 8 (2). Country unknown/Code not available: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/JXCDC.2022.3202517. https://par.nsf.gov/biblio/10383634.

@article{osti_10383634,
place = {Country unknown/Code not available}, title = {RM-NTT: An RRAM-Based Compute-in-Memory Number Theoretic Transform Accelerator}, url = {https://par.nsf.gov/biblio/10383634}, DOI = {10.1109/JXCDC.2022.3202517}, abstractNote = {Not Available}, journal = {IEEE Journal on Exploratory Solid-State Computational Devices and Circuits}, volume = {8}, number = {2}, publisher = {Institute of Electrical and Electronics Engineers}, author = {Park, Yongmo and Wang, Ziyu and Yoo, Sangmin and Lu, Wei D.}, }