The lack of a bulk second-order nonlinearity (
- Publication Date:
- NSF-PAR ID:
- 10386635
- Journal Name:
- Optical Materials Express
- Volume:
- 13
- Issue:
- 1
- Page Range or eLocation-ID:
- Article No. 237
- ISSN:
- 2159-3930
- Publisher:
- Optical Society of America
- Sponsoring Org:
- National Science Foundation
More Like this
-
BACKGROUND Electromagnetic (EM) waves underpin modern society in profound ways. They are used to carry information, enabling broadcast radio and television, mobile telecommunications, and ubiquitous access to data networks through Wi-Fi and form the backbone of our modern broadband internet through optical fibers. In fundamental physics, EM waves serve as an invaluable tool to probe objects from cosmic to atomic scales. For example, the Laser Interferometer Gravitational-Wave Observatory and atomic clocks, which are some of the most precise human-made instruments in the world, rely on EM waves to reach unprecedented accuracies. This has motivated decades of research to develop coherent EM sources over broad spectral ranges with impressive results: Frequencies in the range of tens of gigahertz (radio and microwave regimes) can readily be generated by electronic oscillators. Resonant tunneling diodes enable the generation of millimeter (mm) and terahertz (THz) waves, which span from tens of gigahertz to a few terahertz. At even higher frequencies, up to the petahertz level, which are usually defined as optical frequencies, coherent waves can be generated by solid-state and gas lasers. However, these approaches often suffer from narrow spectral bandwidths, because they usually rely on well-defined energy states of specific materials, which results inmore »
-
Abstract New materials that exhibit strong second-order optical nonlinearities at a desired operational frequency are of paramount importance for nonlinear optics. Giant second-order susceptibility
χ (2)has been obtained in semiconductor quantum wells (QWs). Unfortunately, the limited confining potential in semiconductor QWs causes formidable challenges in scaling such a scheme to the visible/near-infrared (NIR) frequencies for more vital nonlinear-optic applications. Here, we introduce a metal/dielectric heterostructured platform, i.e., TiN/Al2O3epitaxial multilayers, to overcome that limitation. This platform has an extremely highχ (2)of approximately 1500 pm/V at NIR frequencies. By combining the aforementioned heterostructure with the large electric field enhancement afforded by a nanostructured metasurface, the power efficiency of second harmonic generation (SHG) achieved 10−4at an incident pulse intensity of 10 GW/cm2, which is an improvement of several orders of magnitude compared to that of previous demonstrations from nonlinear surfaces at similar frequencies. The proposed quantum-engineered heterostructures enable efficient wave mixing at visible/NIR frequencies into ultracompact nonlinear optical devices. -
Abstract Mid-infrared (MIR) spectrometers are invaluable tools for molecular fingerprinting and hyper-spectral imaging. Among the available spectroscopic approaches, GHz MIR dual-comb absorption spectrometers have the potential to simultaneously combine the high-speed, high spectral resolution, and broad optical bandwidth needed to accurately study complex, transient events in chemistry, combustion, and microscopy. However, such a spectrometer has not yet been demonstrated due to the lack of GHz MIR frequency combs with broad and full spectral coverage. Here, we introduce the first broadband MIR frequency comb laser platform at 1 GHz repetition rate that achieves spectral coverage from 3 to 13 µm. This frequency comb is based on a commercially available 1.56 µm mode-locked laser, robust all-fiber Er amplifiers and intra-pulse difference frequency generation (IP-DFG) of few-cycle pulses in
χ (2)nonlinear crystals. When used in a dual comb spectroscopy (DCS) configuration, this source will simultaneously enable measurements with μs time resolution, 1 GHz (0.03 cm−1) spectral point spacing and a full bandwidth of >5 THz (>166 cm−1) anywhere within the MIR atmospheric windows. This represents a unique spectroscopic resource for characterizing fast and non-repetitive events that are currently inaccessible with other sources. -
Abstract We present the analysis of ∼100 pc scale compact radio continuum sources detected in 63 local (ultra)luminous infrared galaxies (U/LIRGs;
L IR≥ 1011L ⊙), using FWHM ≲ 0.″1–0.″2 resolution 15 and 33 GHz observations with the Karl G. Jansky Very Large Array. We identify a total of 133 compact radio sources with effective radii of 8–170 pc, which are classified into four main categories—“AGN” (active galactic nuclei), “AGN/SBnuc” (AGN-starburst composite nucleus), “SBnuc” (starburst nucleus), and “SF” (star-forming clumps)—based on ancillary data sets and the literature. We find that “AGN” and “AGN/SBnuc” more frequently occur in late-stage mergers and have up to 3 dex higher 33 GHz luminosities and surface densities compared with “SBnuc” and “SF,” which may be attributed to extreme nuclear starburst and/or AGN activity in the former. Star formation rates (SFRs) and surface densities (ΣSFR) are measured for “SF” and “SBnuc” using both the total 33 GHz continuum emission (SFR ∼ 0.14–13M ⊙yr−1, ΣSFR∼ 13–1600M ⊙yr−1kpc−2) and the thermal free–free emission from Hii regions (median SFRth∼ 0.4M ⊙yr−1, yr−1kpc−2). These values are 1–2 dex higher than those measured for similar-sized clumps in nearby normal (non-U/LIRGs). The latter also have a much flatter median 15–33 GHz spectral index (∼−0.08) compared withmore » -
Modulation-based control and locking of lasers, filters and other photonic components is a ubiquitous function across many applications that span the visible to infrared (IR), including atomic, molecular and optical (AMO), quantum sciences, fiber communications, metrology, and microwave photonics. Today, modulators used to realize these control functions consist of high-power bulk-optic components for tuning, sideband modulation, and phase and frequency shifting, while providing low optical insertion loss and operation from DC to 10s of MHz. In order to reduce the size, weight and cost of these applications and improve their scalability and reliability, modulation control functions need to be implemented in a low loss, wafer-scale CMOS-compatible photonic integration platform. The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT, lead zirconate titanate) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform, that maintains low optical loss (0.03 dB/cm in a 625 µmmore »