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Title: Engineered second-order nonlinearity in silicon nitride

The lack of a bulk second-order nonlinearity (χ(2)) in silicon nitride (Si3N4) keeps this low-loss, CMOS-compatible platform from key active functions such as Pockels electro-optic (EO) modulation and efficient second harmonic generation (SHG). We demonstrate a successful induction ofχ(2)in Si3N4through electrical poling with an externally-applied field to align the Si-N bonds. This alignment breaks the centrosymmetry of Si3N4, and enables the bulkχ(2). The sample is heated to over 500°C to facilitate the poling. The comparison between the EO responses of poled and non-poled Si3N4, measured using a Si3N4micro-ring modulator, shows at least a 25X enhancement in ther33EO component. The maximumχ(2)we obtain through poling is 0.30pm/V. We observe a remarkable improvement in the speed of the measured EO responses from 3 GHz to 15 GHz (3 dB bandwidth) after the poling, which confirms theχ(2)nature of the EO response induced by poling. This work paves the way for high-speed active functions on the Si3N4platform.

 
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NSF-PAR ID:
10386635
Author(s) / Creator(s):
; ; ; ; ; ;
Publisher / Repository:
Optical Society of America
Date Published:
Journal Name:
Optical Materials Express
Volume:
13
Issue:
1
ISSN:
2159-3930
Page Range / eLocation ID:
Article No. 237
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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    Acknowledgment

    This work was partially supported by the U.S. National Science Foundation (NSF) Award No. ECCS-1931088. S.L. and H.W.S. acknowledge the support from the Improvement of Measurement Standards and Technology for Mechanical Metrology (Grant No. 22011044) by KRISS.

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