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Title: Ag Alloying in Cu 2−y Ag y Ba(Ge,Sn)Se 4 Films and Photovoltaic Devices
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NSF-PAR ID:
10393584
Author(s) / Creator(s):
 ;  ;  ;  
Publisher / Repository:
Wiley Blackwell (John Wiley & Sons)
Date Published:
Journal Name:
Solar RRL
Volume:
7
Issue:
7
ISSN:
2367-198X
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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  1. Abstract

    The large open‐circuit voltage deficit (Voc,def) is the key issue that limits kesterite (Cu2ZnSn(S,Se)4, [CZTSSe]) solar cell performance. Substitution of Cu+by larger ionic Ag+((Ag,Cu)2ZnSn(S,Se)4, [ACZTSSe]) is one strategy to reduce Cu–Zn disorder and improve kesteriteVoc. However, the so far reported ACZTSSe solar cell has not demonstrated lowerVoc,defthan the world record device, indicating that some intrinsic defect properties cannot be mitigated using current approaches. Here, incorporation of Ag into kesterite through a dimethyl sulfoxide (DMSO) solution that can facilitate direct phase transformation grain growth and produce a uniform and less defective kesterite absorber is reported. The same coordination chemistry of Ag+and Cu+in the DMSO solution results in the same reaction path of ACZTSSe to CZTSSe, resulting in significant suppression of CuZndefects, its defect cluster [2CuZn + SnZn], and deep level defect CuSn. A champion device with an efficiency of 12.5% (active area efficiency 13.5% without antireflection coating) and a record lowVoc,def(64.2% Shockley–Queisser limit) is achieved from ACZTSSe with 5% Ag content.

     
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  2. In recent years, Cu2ZnSn(S,Se)4(CZTSSe) materials have enabled important progress in associated thin‐film photovoltaic (PV) technology, while avoiding scarce and/or toxic metals; however, cationic disorder and associated band tailing fundamentally limit device performance. Cu2BaSnS4(CBTS) has recently been proposed as a prospective alternative large bandgap (~2 eV), environmentally friendly PV material, with ~2% power conversion efficiency (PCE) already demonstrated in corresponding devices. In this study, a two‐step process (i.e., precursor sputter deposition followed by successive sulfurization/selenization) yields high‐quality nominally pinhole‐free films with large (>1 µm) grains of selenium‐incorporated (x= 3) Cu2BaSnS4−xSex(CBTSSe) for high‐efficiency PV devices. By incorporating Se in the sulfide film, absorber layers with 1.55 eV bandgap, ideal for single‐junction PV, have been achieved within the CBTSSe trigonal structural family. The abrupt transition in quantum efficiency data for wavelengths above the absorption edge, coupled with a strong sharp photoluminescence feature, confirms the relative absence of band tailing in CBTSSe compared to CZTSSe. For the first time, by combining bandgap tuning with an air‐annealing step, a CBTSSe‐based PV device with 5.2% PCE (total area 0.425 cm2) is reported, >2.5× better than the previous champion pure sulfide device. These results suggest substantial promise for the emerging Se‐rich Cu2BaSnS4–xSexfamily for high‐efficiency and earth‐abundant PV.

     
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  4. Abstract

    Synthesizing solids in molten fluxes enables the rapid diffusion of soluble species at temperatures lower than in solid‐state reactions, leading to crystal formation of kinetically stable compounds. In this study, we demonstrate the effectiveness of mixed hydroxide and halide fluxes in synthesizing complex Sr/Ag/Se in mixed LiOH/LiCl. We have accessed a series of two‐dimensional Sr(Ag1−xLix)2Se2layered phases. With increased LiOH/LiCl ratio or reaction temperature, Li partially substituted Ag to form solid solutions of Sr(Ag1−xLix)2Se2withxup to 0.45. In addition, a new type of intergrowth compound [Sr3Se2][(Ag1−xLix)2Se2] was synthesized upon further reaction of Sr(Ag1−xLix)2Se2with SrSe. Both Sr(Ag1−xLix)2Se2and [Sr3Se2][(Ag1−xLix)2Se2] exhibit a direct band gap, which increases with increasing Li substitution (x). Therefore, the band gap of Sr(Ag1−xLix)2Se2can be precisely tuned via fine‐tuningxthat is controlled by only the flux ratio and temperature.

     
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    Synthesizing solids in molten fluxes enables the rapid diffusion of soluble species at temperatures lower than in solid‐state reactions, leading to crystal formation of kinetically stable compounds. In this study, we demonstrate the effectiveness of mixed hydroxide and halide fluxes in synthesizing complex Sr/Ag/Se in mixed LiOH/LiCl. We have accessed a series of two‐dimensional Sr(Ag1−xLix)2Se2layered phases. With increased LiOH/LiCl ratio or reaction temperature, Li partially substituted Ag to form solid solutions of Sr(Ag1−xLix)2Se2withxup to 0.45. In addition, a new type of intergrowth compound [Sr3Se2][(Ag1−xLix)2Se2] was synthesized upon further reaction of Sr(Ag1−xLix)2Se2with SrSe. Both Sr(Ag1−xLix)2Se2and [Sr3Se2][(Ag1−xLix)2Se2] exhibit a direct band gap, which increases with increasing Li substitution (x). Therefore, the band gap of Sr(Ag1−xLix)2Se2can be precisely tuned via fine‐tuningxthat is controlled by only the flux ratio and temperature.

     
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