Balgley, Jesse, Butler, Jackson, Biswas, Sananda, Ge, Zhehao, Lagasse, Samuel, Taniguchi, Takashi, Watanabe, Kenji, Cothrine, Matthew, Mandrus, David G., Velasco, Jairo, Valentí, Roser, and Henriksen, Erik A.. Ultrasharp Lateral p–n Junctions in Modulation-Doped Graphene. Retrieved from https://par.nsf.gov/biblio/10395539. Nano Letters 22.10 Web. doi:10.1021/acs.nanolett.2c00785.

Balgley, Jesse, Butler, Jackson, Biswas, Sananda, Ge, Zhehao, Lagasse, Samuel, Taniguchi, Takashi, Watanabe, Kenji, Cothrine, Matthew, Mandrus, David G., Velasco, Jairo, Valentí, Roser, & Henriksen, Erik A.. Ultrasharp Lateral p–n Junctions in Modulation-Doped Graphene. Nano Letters, 22 (10). Retrieved from https://par.nsf.gov/biblio/10395539. https://doi.org/10.1021/acs.nanolett.2c00785

Balgley, Jesse, Butler, Jackson, Biswas, Sananda, Ge, Zhehao, Lagasse, Samuel, Taniguchi, Takashi, Watanabe, Kenji, Cothrine, Matthew, Mandrus, David G., Velasco, Jairo, Valentí, Roser, and Henriksen, Erik A.. "Ultrasharp Lateral p–n Junctions in Modulation-Doped Graphene". Nano Letters 22 (10). Country unknown/Code not available. https://doi.org/10.1021/acs.nanolett.2c00785. https://par.nsf.gov/biblio/10395539.

@article{osti_10395539,
place = {Country unknown/Code not available}, title = {Ultrasharp Lateral p–n Junctions in Modulation-Doped Graphene}, url = {https://par.nsf.gov/biblio/10395539}, DOI = {10.1021/acs.nanolett.2c00785}, abstractNote = {}, journal = {Nano Letters}, volume = {22}, number = {10}, author = {Balgley, Jesse and Butler, Jackson and Biswas, Sananda and Ge, Zhehao and Lagasse, Samuel and Taniguchi, Takashi and Watanabe, Kenji and Cothrine, Matthew and Mandrus, David G. and Velasco, Jairo and Valentí, Roser and Henriksen, Erik A.}, }