skip to main content


Title: Post‐Annealing Treatment on Hydrothermally Grown Antimony Sulfoselenide Thin Films for Efficient Solar Cells
  more » « less
Award ID(s):
1950785
NSF-PAR ID:
10398154
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  
Publisher / Repository:
Wiley Blackwell (John Wiley & Sons)
Date Published:
Journal Name:
Solar RRL
Volume:
7
Issue:
4
ISSN:
2367-198X
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract

    Antimony selenide (Sb2Se3) has excellent directional optical and electronic behaviors due to its quasi‐1D nanoribbons structure. The photovoltaic performance of Sb2Se3solar cells largely depends on the orientation of the nanoribbons. It is desired to grow these Sb2Se3ribbons normal to the substrate to enhance photoexcited carrier transport. Therefore, it is necessary to develop a strategy for the vertical growth of Sb2Se3nanoribbons to achieve high‐efficiency solar cells. Since antimony sulfide (Sb2S3) and Sb2Se3are from the same space group (Pbnm) and have the same crystal structure, herein an ultrathin layer (≈20 nm) of Sb2S3has been used to assist the vertical growth of Sb2Se3nanoribbons to improve the overall efficiency of Sb2Se3solar cell. The Sb2S3thin layer deposited by the hydrothermal process helps the Sb2Se3ribbons grow normal to the substrate and increases the efficiency from 5.65% to 7.44% through the improvement of all solar cell parameters. This work is expected to open a new direction to tailor the Sb2Se3grain growth and further develop the Sb2Se3solar cell in the future.

     
    more » « less
  2.  
    more » « less
  3.  
    more » « less
  4. Abstract

    The two‐step conversion process consisting of metal halide deposition followed by conversion to hybrid perovskite has been successfully applied toward producing high‐quality solar cells of the archetypal MAPbI3hybrid perovskite, but the conversion of other halide perovskites, such as the lower bandgap FAPbI3, is more challenging and tends to be hampered by the formation of hexagonal nonperovskite polymorph of FAPbI3, requiring Cs addition and/or extensive thermal annealing. Here, an efficient room‐temperature conversion route of PbI2into the α‐FAPbI3perovskite phase without the use of cesium is demonstrated. Using in situ grazing incidence wide‐angle X‐ray scattering (GIWAXS) and quartz crystal microbalance with dissipation (QCM‐D), the conversion behaviors of the PbI2precursor from its different states are compared. α‐FAPbI3forms spontaneously and efficiently at room temperature from P2(ordered solvated polymorphs with DMF) without hexagonal phase formation and leads to complete conversion after thermal annealing. The average power conversion efficiency (PCE) of the fabricated solar cells is greatly improved from 16.0(±0.32)% (conversion from annealed PbI2) to 17.23(±0.28)% (from solvated PbI2) with a champion device PCE > 18% due to reduction of carrier recombination rate. This work provides new design rules toward the room‐temperature phase transformation and processing of hybrid perovskite films based on FA+cation without the need for Cs+or mixed halide formulation.

     
    more » « less
  5. The antimony selenide thin film solar cells technology becomes promising due to its excellent anisotropic charge transport and brilliant light absorption capability. Especially, the device performance heavily relies on the vertically oriented Sb2Se3grain to promote photoexcited carrier transport. However, crystalline orientation control has been a major issue in Sb2Se3thin film solar cells. Herein, a new strategy has been developed to tailor the crystal growth of Sb2Se3ribbons perpendicular to the substrate by using the structural heterostructured CdS buffer layer. The heterostructured CdS buffer layer is formed by a dual layer of CdS nanorods and nanoparticles. The hexagonal CdS nanorods passivated by a thin cubic CdS nanoparticle layer can promote [211] and [221] directional growth of Sb2Se3ribbons using a close space sublimation approach. The improved buffer/absorber interface, reduced interface defects, and recombination loss contribute to the improved device efficiency of 7.16%. This new structural heterostructured CdS buffer layer can regulate Sb2Se3nanoribbons crystal growth and pave the way to further improve the low‐dimensional chalcogenide thin film solar cell efficiency.

     
    more » « less