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1. Ultrasensitive Perovskite Photodetector Achieved When Configured with a Si Metal Oxide Semiconductor Field‐Effect Transistor

   https://doi.org/10.1002/adpr.202200034  

   Liu, Jinbo; Haroldson, Ross; Verkhogliadov, Grigorii; Lin, Dayang; Gu, Qing; Zakhidov, Anvar_A; Hu, Walter; Young, Chadwin_D (October 2022, Advanced Photonics Research)

   A novel photodetecting device architecture that combines the optoelectronic property advantages of a perovskite and the amplification properties of a Si metal–oxide–semiconductor field‐effect transistor (MOSFET) to innovate a photodetecting system with ultrahigh sensitivity, especially in low‐light intensity, is demonstrated. This perovskite‐based MOSFET photodetector (PM‐PD) can respond as low as 116 nW cm⁻²with extremely high responsivity 4200 A W⁻¹. The perovskite is part of the gate dielectric to modulate the MOSFET drain current when the light intensity is changed. A direct bandgap, organic–inorganic hybrid halide perovskite with a large optical absorption coefficient, can enhance photodetector performance. However, perovskite materials are not good conductors for transporting photogenerated electrons and holes compared with single‐crystal silicon. Therefore, the perovskite was utilized as a dielectric where the capacitance is used instead. In the proposed PM‐PD architecture, changing the width‐to‐length (W/L) ratio of perovskite capacitor electrodes, can modulate the dark current from picoamperes to microamperes providing a tunable parameter for optimizing photodetecting performance. Furthermore, the capacitance of the perovskite can be modulated by frequency, which facilitates matching the capacitance of perovskite and MOSFET gate oxide—another important requirement for optimal photodetecting performance. Finally, our novel PM‐PD is commensurate with potential 3D monolithic integration. 

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2. Subcircuit Based Modelling of SiC MOSFET in MATLAB/SIMULINK

   https://doi.org/10.1109/ECCE-Asia49820.2021.9479130  

   Wei, Yuqi; Mantooth, Alan (May 2021, IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia))

   Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has been widely used in numerous industrial applications owning to their characteristics of low on-state resistance, high thermal conductivity, and high operating temperature. To fully utilize the potential of SiC MOSFET, an accurate device model is desired to evaluate the device performance before fabrication. In this article, an accurate subcircuit based model is used to describe the SiC MOSFET dynamic performance. In the model, the non-linearity of device parasitic capacitance is considered by extracting capacitance values under multiple drain-source voltage values from datasheet. All the possible circuit parasitic inductances are extracted by using ANSYS Q3D. To reduce the model complexity, the threshold voltage based model for MOSFET is adopted. Finally, the subcircuit based model is implemented in MATLAB/SIMULINK. The developed model has the advantages of high accuracy, convenient, fast execution time. The model would be a convenient tool to evaluate the device performance and help understanding the experiment phenomena. To validate the accuracy of the developed model, double pulse test (DPT) results of a 1.2 kV SiC MOSFET (ROHM) from both simulation and experiment are compared, the results shown that the developed model is an effective evaluation tool for the SiC MOSFET performance. 

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3. Four Control Freedoms AGD for Hybrid SiC MOSFET and Si IGBT Application

   https://doi.org/10.1109/APEC42165.2021.9487290  

   Wei, Yuqi; Woldegiorgis, Dereje; Sweeting, Rosten; Mantooth, Alan (June 2021, Four Control Freedoms AGD for Hybrid SiC MOSFET and Si IGBT Application)

   Silicon carbide (SiC) MOSFET features low switching loss and it is advantageous in high switching frequency application, but the manufacture per Ampere cost is approximately five times higher than the silicon (Si) IGBT. Therefore, by paralleling Si IGBT and SiC MOSFET together, a trade-off between cost and loss is achieved. In this paper, a four control freedoms active gate driver (AGD) including turn-on delay, turn-off delay, and two independent gate voltages, is proposed to optimize the performance of the paralleled device. By adjusting these four control freedoms, optimal operation for paralleled device can be obtained. Moreover, the proposed AGD can dynamically adjust the current ratio between two paralleled devices, which can help achieve thermal balance between two devices and improve system reliability. Double pulse test (DPT) experimental results are presented and analyzed to validate the effectiveness of the proposed AGD for paralleled Si IGBT and SiC MOSFET application. 

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4. Modeling and Characterization of 10-kV SiC MOSFET Modules for Medium-Voltage Distribution Systems

   https://doi.org/10.1109/PEDG48541.2020.9244411  

   Oggier, German G.; Jimenez, Roderick Gomez; Zhao, Yue; Balda, Juan Carlos (September 2020, 2020 IEEE 11th International Symposium on Power Electronics for Distributed Generation Systems (PEDG))

   This work presents the modeling and characterization of 10-kV SiC MOSFET modules used for medium-voltage distribution system applications. In addition to the nonlinear junction capacitances of the devices, the model includes the non-linearities present at steady-state like transfer characteristics and the behavior in the Ohmic region, which allows to increase the accuracy of the SiC MOSFET model. Furthermore, the parasitic inductances in the circuit (such as the source inductance shared by the power stage and driver loop and the drain inductance) are considered in the model since it has been demonstrated previously that it influences the total losses. By using the proposed model, the calculated voltage and current transients show a good match with the experimental results. 

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5. Modeling and Characterization of 10-kV SiC MOSFET Modules for Medium- Voltage Distribution Systems

   Oggiert, German G. (September 2020, IEEE International Symposium on Power Electronics for Distributed Generation Systems)

   null (Ed.)

   This work presents the modeling and characterization of 10-kV SiC MOSFET modules used for medium-voltage distribution system applications. In addition to the nonlinear junction capacitances of the devices, the model includes the nonlinearities present at steady-state like transfer characteristics and the behavior in the Ohmic region, which allows to increase the accuracy of the SiC MOSFET model. Furthermore, the parasitic inductances in the circuit (such as the source inductance shared by the power stage and driver loop and the drain Inductance) are considered in the model since it has been demonstrated previously that it influences the total losses. By using the proposed model, the calculated voltage and current transients show a good match with the experimental results. 

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