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Title: NiO/β-(Al x Ga 1−x ) 2 O 3 /Ga 2 O 3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV
NiO/β-(Al x Ga 1− x ) 2 O 3 /Ga 2 O 3 heterojunction lateral geometry rectifiers with diameter 50–100  μm exhibited maximum reverse breakdown voltages >7 kV, showing the advantage of increasing the bandgap using the β-(Al x Ga 1− x ) 2 O 3 alloy. This Si-doped alloy layer was grown by metal organic chemical vapor deposition with an Al composition of ∼21%. On-state resistances were in the range of 50–2180 Ω cm 2 , leading to power figures-of-merit up to 0.72 MW cm −2 . The forward turn-on voltage was in the range of 2.3–2.5 V, with maximum on/off ratios >700 when switching from 5 V forward to reverse biases up to −100 V. Transmission line measurements showed the specific contact resistance was 0.12 Ω cm 2 . The breakdown voltage is among the highest reported for any lateral geometry Ga 2 O 3 -based rectifier.  more » « less
Award ID(s):
1856662
PAR ID:
10400690
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ; ; ;
Date Published:
Journal Name:
Journal of Vacuum Science & Technology A
Volume:
41
Issue:
3
ISSN:
0734-2101
Page Range / eLocation ID:
032701
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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