Shahi, Simran, Liu, Maomao, Jaiswal, Hemendra Nath, Chakravarty, Anindita, Wei, Sichen, Fu, Yu, Ahmed, Asma, Cabanillas, Anthony, Yao, Fei, and Li, Huamin. Metal-Semiconductor Schottky Diodes with Record-High Rectification and Conductance Using Two-Dimensional Monolayer Decoration. Retrieved from https://par.nsf.gov/biblio/10401644. IEEE Electron Devices Technology & Manufacturing Conference . Web. doi:10.1109/EDTM53872.2022.9798125.

Shahi, Simran, Liu, Maomao, Jaiswal, Hemendra Nath, Chakravarty, Anindita, Wei, Sichen, Fu, Yu, Ahmed, Asma, Cabanillas, Anthony, Yao, Fei, & Li, Huamin. Metal-Semiconductor Schottky Diodes with Record-High Rectification and Conductance Using Two-Dimensional Monolayer Decoration. IEEE Electron Devices Technology & Manufacturing Conference, (). Retrieved from https://par.nsf.gov/biblio/10401644. https://doi.org/10.1109/EDTM53872.2022.9798125

Shahi, Simran, Liu, Maomao, Jaiswal, Hemendra Nath, Chakravarty, Anindita, Wei, Sichen, Fu, Yu, Ahmed, Asma, Cabanillas, Anthony, Yao, Fei, and Li, Huamin. "Metal-Semiconductor Schottky Diodes with Record-High Rectification and Conductance Using Two-Dimensional Monolayer Decoration". IEEE Electron Devices Technology & Manufacturing Conference (). Country unknown/Code not available. https://doi.org/10.1109/EDTM53872.2022.9798125. https://par.nsf.gov/biblio/10401644.

@article{osti_10401644,
place = {Country unknown/Code not available}, title = {Metal-Semiconductor Schottky Diodes with Record-High Rectification and Conductance Using Two-Dimensional Monolayer Decoration}, url = {https://par.nsf.gov/biblio/10401644}, DOI = {10.1109/EDTM53872.2022.9798125}, abstractNote = {}, journal = {IEEE Electron Devices Technology & Manufacturing Conference}, author = {Shahi, Simran and Liu, Maomao and Jaiswal, Hemendra Nath and Chakravarty, Anindita and Wei, Sichen and Fu, Yu and Ahmed, Asma and Cabanillas, Anthony and Yao, Fei and Li, Huamin}, }