skip to main content


Title: Hybrid spin Hall nano-oscillators based on ferromagnetic metal/ferrimagnetic insulator heterostructures
Abstract

Spin-Hall nano-oscillators (SHNOs) are promising spintronic devices to realize current controlled GHz frequency signals in nanoscale devices for neuromorphic computing and creating Ising systems. However, traditional SHNOs devices based on transition metals have high auto-oscillation threshold currents as well as low quality factors and output powers. Here we demonstrate a new type of hybrid SHNO based on a permalloy (Py) ferromagnetic-metal nanowire and low-damping ferrimagnetic insulator, in the form of epitaxial lithium aluminum ferrite (LAFO) thin films. The superior characteristics of such SHNOs are associated with the excitation of larger spin-precession angles and volumes. We further find that the presence of the ferrimagnetic insulator enhances the auto-oscillation amplitude of spin-wave edge modes, consistent with our micromagnetic modeling. This hybrid SHNO expands spintronic applications, including providing new means of coupling multiple SHNOs for neuromorphic computing and advancing magnonics.

 
more » « less
NSF-PAR ID:
10403266
Author(s) / Creator(s):
; ; ; ; ; ;
Publisher / Repository:
Nature Publishing Group
Date Published:
Journal Name:
Nature Communications
Volume:
14
Issue:
1
ISSN:
2041-1723
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract

    Magnetocapacitance (MC) effect has been observed in systems where both symmetries of time-reversal and space-inversion are broken, for examples, in multiferroic materials and spintronic devices. The effect has received increasing attention due to its interesting physics and the prospect of applications. Recently, a large tunnel magnetocapacitance (TMC) of 332% at room temperature was reported using MgO-based (001)-textured magnetic tunnel junctions (MTJs). Here, we report further enhancement in TMC beyond 420% at room temperature using epitaxial MTJs with an MgAl2O4(001) barrier with a cation-disordered spinel structure. This large TMC is partially caused by the high effective tunneling spin polarization, resulted from the excellent lattice matching between the Fe electrodes and the MgAl2O4barrier. The epitaxial nature of this MTJ system sports an enhanced spin-dependent coherent tunneling effect. Among other factors leading to the large TMC are the appearance of the spin capacitance, the large barrier height, and the suppression of spin flipping through the MgAl2O4barrier. We explain the observed TMC by the Debye-Fröhlich modelled calculation incorporating Zhang-sigmoid formula, parabolic barrier approximation, and spin-dependent drift diffusion model. Furthermore, we predict a 1000% TMC in MTJs with a spin polarization of 0.8. These experimental and theoretical findings provide a deeper understanding on the intrinsic mechanism of the TMC effect. New applications based on large TMC may become possible in spintronics, such as multi-value memories, spin logic devices, magnetic sensors, and neuromorphic computing.

     
    more » « less
  2. The inverse spinel ferrimagnetic NiCo2O4possesses high magnetic Curie temperature TC, high spin polarization, and strain-tunable magnetic anisotropy. Understanding the thickness scaling limit of these intriguing magnetic properties in NiCo2O4thin films is critical for their implementation in nanoscale spintronic applications. In this work, we report the unconventional magnetotransport properties of epitaxial (001) NiCo2O4films on MgAl2O4substrates in the ultrathin limit. Anomalous Hall effect measurements reveal strong perpendicular magnetic anisotropy for films down to 1.5 unit cell (1.2 nm), while TCfor 3 unit cell and thicker films remains above 300 K. The sign change in the anomalous Hall conductivity [Formula: see text] and its scaling relation with the longitudinal conductivity ([Formula: see text]) can be attributed to the competing effects between impurity scattering and band intrinsic Berry curvature, with the latter vanishing upon the thickness driven metal–insulator transition. Our study reveals the critical role of film thickness in tuning the relative strength of charge correlation, Berry phase effect, spin–orbit interaction, and impurity scattering, providing important material information for designing scalable epitaxial magnetic tunnel junctions and sensing devices using NiCo2O4.

     
    more » « less
  3. Abstract

    Brain‐inspired (neuromorphic) computing that offers lower energy consumption and parallelism (simultaneous processing and memorizing) compared to von Neumann computing provides excellent opportunities in many computational tasks ranging from image recognition to speech processing. To accomplish neuromorphic computing, highly efficient optoelectronic synapses, which can be the building blocks of optoelectronic neuromorphic computers, are necessary. Currently, carbon nanotubes (CNTs), an attractive candidate to develop circuit‐level photonic synapses, provide weak light responses. The inferior photoresponse of CNTs increases the energy consumption of neuromorphic optoelectronic devices. Herein, a method to grow organic–inorganic halide perovskite quantum dots (PQDs) directly on multiwall CNTs (MWCNTs) to increase the photosensitivity of optoelectronic synapses is demonstrated. The new hybrid material synchronizes the high photoresponse of PQDs and the excellent electrical properties of MWCNTs to provide photonic memory under very low light intensity (125 µW cm−2). However, neat MWCNTs do not show any detectable light response at the tested light intensity, as high as 25 mW cm−2. Since the PQDs are grown directly on and in the MWCNTs, the hybrid PQD‐MWCNT provides a new direction for the future MWCNT‐based optoelectronic devices for neuromorphic computing with a potential to break the von Neumann bottleneck.

     
    more » « less
  4. Abstract

    Ferrimagnetic materials combine the advantages of the low magnetic moment of an antiferromagnet and the ease of realizing magnetic reading of a ferromagnet. Recently, it was demonstrated that compensated ferrimagnetic half metals can be realized in Heusler alloys, where high spin polarization, zero magnetic moment, and low magnetic damping can be achieved at the same time. In this work, by studying the spin–orbit torque induced switching in the Heusler alloy Mn2Ru1−xGa, it is found that efficient current‐induced magnetic switching can be realized in a nearly compensated sample with strong perpendicular anisotropy and large film thickness. This work demonstrates the possibility of employing compensated Heusler alloys for fast, energy‐efficient spintronic devices.

     
    more » « less
  5. Promising for digital signal processing applications, approximate computing has been extensively considered to tradeoff limited accuracy for improvements in other circuit metrics such as area, power, and performance. In this paper, approximate arithmetic circuits are proposed by using emerging nanoscale spintronic devices. Leveraging the intrinsic current-mode thresholding operation of spintronic devices, we initially present a hybrid spin-CMOS majority gate design based on a composite spintronic device structure consisting of a magnetic domain wall motion stripe and a magnetic tunnel junction. We further propose a compact and energy-efficient accuracy-configurable adder design based on the majority gate. Unlike most previous approximate circuit designs that hardwire a constant degree of approximation, this design is adaptive to the inherent resilience in various applications to different degrees of accuracy. Subsequently, we propose two new approximate compressors for utilization in fast multiplier designs. The device-circuit SPICE simulation shows 34.58% and 66% improvement in power consumption, respectively, for the accurate and approximate modes of the accuracy-configurable adder, compared to the recently reported domain wall motion-based full adder design. In addition, the proposed accuracy-configurable adder and approximate compressors can be efficiently utilized in the discrete cosine transform (DCT) as a widely-used digital image processing algorithm. The results indicate that the DCT and inverse DCT (IDCT) using the approximate multiplier achieve ~2x energy saving and 3x speed-up compared to an exactly-designed circuit, while achieving comparable quality in its output result. 
    more » « less