Shanks, Daniel N., Mahdikhanysarvejahany, Fateme, Stanfill, Trevor G., Koehler, Michael R., Mandrus, David G., Taniguchi, Takashi, Watanabe, Kenji, LeRoy, Brian J., and Schaibley, John R. Interlayer Exciton Diode and Transistor. Retrieved from https://par.nsf.gov/biblio/10403970. Nano Letters 22.16 Web. doi:10.1021/acs.nanolett.2c01905.

Shanks, Daniel N., Mahdikhanysarvejahany, Fateme, Stanfill, Trevor G., Koehler, Michael R., Mandrus, David G., Taniguchi, Takashi, Watanabe, Kenji, LeRoy, Brian J., & Schaibley, John R. Interlayer Exciton Diode and Transistor. Nano Letters, 22 (16). Retrieved from https://par.nsf.gov/biblio/10403970. https://doi.org/10.1021/acs.nanolett.2c01905

Shanks, Daniel N., Mahdikhanysarvejahany, Fateme, Stanfill, Trevor G., Koehler, Michael R., Mandrus, David G., Taniguchi, Takashi, Watanabe, Kenji, LeRoy, Brian J., and Schaibley, John R. "Interlayer Exciton Diode and Transistor". Nano Letters 22 (16). Country unknown/Code not available. https://doi.org/10.1021/acs.nanolett.2c01905. https://par.nsf.gov/biblio/10403970.

@article{osti_10403970,
place = {Country unknown/Code not available}, title = {Interlayer Exciton Diode and Transistor}, url = {https://par.nsf.gov/biblio/10403970}, DOI = {10.1021/acs.nanolett.2c01905}, abstractNote = {}, journal = {Nano Letters}, volume = {22}, number = {16}, author = {Shanks, Daniel N. and Mahdikhanysarvejahany, Fateme and Stanfill, Trevor G. and Koehler, Michael R. and Mandrus, David G. and Taniguchi, Takashi and Watanabe, Kenji and LeRoy, Brian J. and Schaibley, John R.}, }