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Title: Metal–Semiconductor–Metal Photodetectors Based on β-MgGaO Thin Films
Award ID(s):
2046648 2105566
NSF-PAR ID:
10404325
Author(s) / Creator(s):
; ; ; ; ; ; ;
Date Published:
Journal Name:
ACS Applied Electronic Materials
ISSN:
2637-6113
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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  1. The contact resistance at metal-metal (W, Mo, Ru, Co, TiN) interfaces is determined using a new method based on blanket superlattice thin films where the resistivity ρ parallel to the interfaces is measured as a function of superlattice period Λ to quantify the electron interface scattering. Epitaxial W(001)/Mo(001) superlattices show a continuous resistivity increase from 7.10 to 8.62 µΩ-cm with decreasing Λ = 50-1.7 nm, indicating a contact resistance of 2.6×10-16 Ω-m2. Ru/Co multilayers show a much more pronounced increase from 15.0 to 47.5 µΩ-cm with Λ = 60-2 nm which is attributed to atomic intermixing leading to an interfacial Ru-Co alloy with a high measured ρ = 61 µΩ-cm and a Ru-Co contact resistance for interfaces deposited at 400 °C of 9.1 ×10-15 Ω-m2. Ru/TiN and Co/TiN interface resistances are dominated by the high ρ for TiN, and are therefore proportional to the TiN thickness. 
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  2. null (Ed.)