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Title: Graphene Film Growth on Silicon Carbide by Hot Filament Chemical Vapor Deposition
The electrical properties of graphene on dielectric substrates, such as silicon carbide (SiC), have received much attention due to their interesting applications. This work presents a method to grow graphene on a 6H-SiC substrate at a pressure of 35 Torr by using the hot filament chemical vapor deposition (HFCVD) technique. The graphene deposition was conducted in an atmosphere of methane and hydrogen at a temperature of 950 °C. The graphene films were analyzed using Raman spectroscopy, scanning electron microscopy, atomic force microscopy, energy dispersive X-ray, and X-ray photoelectron spectroscopy. Raman mapping and AFM measurements indicated that few-layer and multilayer graphene were deposited from the external carbon source depending on the growth parameter conditions. The compositional analysis confirmed the presence of graphene deposition on SiC substrates and the absence of any metal involved in the growth process.  more » « less
Award ID(s):
1849243
PAR ID:
10407191
Author(s) / Creator(s):
; ; ;
Date Published:
Journal Name:
Nanomaterials
Volume:
12
Issue:
17
ISSN:
2079-4991
Page Range / eLocation ID:
3033
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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