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Title: Study on the Quantum Efficiency Enhancement in AlInN Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy
We report on the demonstration of electron blocking layer free AlInN nanowire light-emitting diodes (LEDs) operating in the 280–365 nm wavelength region. The molecular beam epitaxial grown AlInN nanowires have a relatively high internal quantum efficiency of > 52%. Moreover, we show that the light extraction efficiency of the nanowires could reach ~ 63% for hexagonal photonic crystal nanowire structures which is significantly higher compared to that of the random nanowire arrays. This study provides significant insights into the design and fabrication of a new type of high-performance AlInN nanowire ultraviolet light-emitters.  more » « less
Award ID(s):
1944312
NSF-PAR ID:
10410578
Author(s) / Creator(s):
; ;
Date Published:
Journal Name:
2022 Compound Semiconductor Week
Page Range / eLocation ID:
1 to 2
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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