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Title: Sputtered L 1 0 ‐FePd and its Synthetic Antiferromagnet on Si/SiO 2 Wafers for Scalable Spintronics
Abstract

As a promising alternative to the mainstream CoFeB/MgO system with interfacial perpendicular magnetic anisotropy (PMA),L10‐FePd and its synthetic antiferromagnet (SAF) structure with large crystalline PMA can support spintronic devices with sufficient thermal stability at sub‐5 nm sizes. However, the compatibility requirement of preparingL10‐FePd thin films on Si/SiO2wafers is still unmet. In this paper, high‐qualityL10‐FePd and its SAF on Si/SiO2wafers are prepared by coating the amorphous SiO2surface with an MgO(001) seed layer. The preparedL10‐FePd single layer and SAF stack are highly (001)‐textured, showing strong PMA, low damping, and sizeable interlayer exchange coupling, respectively. Systematic characterizations, including advanced X‐ray diffraction measurement and atomic resolution‐scanning transmission electron microscopy, are conducted to explain the outstanding performance ofL10‐FePd layers. A fully‐epitaxial growth that starts from MgO seed layer, induces the (001) texture ofL10‐FePd, and extends through the SAF spacer is observed. This study makes the vision of scalable spintronics more practical.

 
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Award ID(s):
2226579
NSF-PAR ID:
10410792
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  
Publisher / Repository:
Wiley Blackwell (John Wiley & Sons)
Date Published:
Journal Name:
Advanced Functional Materials
Volume:
33
Issue:
18
ISSN:
1616-301X
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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    Acknowledgement

    This work was supported by the U.S. National Science Foundation (NSF) Award No. ECCS-1931088. S.L. and H.W.S. acknowledge the support from the Improvement of Measurement Standards and Technology for Mechanical Metrology (Grant No. 22011044) by KRISS.

    References

    [1] Younget al.,IEEE Computational Intelligence Magazine,vol. 13, no. 3, pp. 55-75, 2018.

    [2] Hadsellet al.,Journal of Field Robotics,vol. 26, no. 2, pp. 120-144, 2009.

    [3] Najafabadiet al.,Journal of Big Data,vol. 2, no. 1, p. 1, 2015.

    [4] Zhaoet al.,Applied Physics Reviews,vol. 7, no. 1, 2020.

    [5] Zidanet al.,Nature Electronics,vol. 1, no. 1, pp. 22-29, 2018.

    [6] Wulfet al.,SIGARCH Comput. Archit. News,vol. 23, no. 1, pp. 20–24, 1995.

    [7] Wilkes,SIGARCH Comput. Archit. News,vol. 23, no. 4, pp. 4–6, 1995.

    [8] Ielminiet al.,Nature Electronics,vol. 1, no. 6, pp. 333-343, 2018.

    [9] Changet al.,Nano Letters,vol. 10, no. 4, pp. 1297-1301, 2010.

    [10] Qinet al., Physica Status Solidi (RRL) - Rapid Research Letters, pssr.202200075R1, In press, 2022.

     
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