skip to main content

Attention:

The NSF Public Access Repository (PAR) system and access will be unavailable from 11:00 PM ET on Friday, December 13 until 2:00 AM ET on Saturday, December 14 due to maintenance. We apologize for the inconvenience.


Title: Monolithic silicon photonic 32x32 thin-CLOS AWGR for all-to-all interconnections

This paper reports the design, fabrication, and experimental demonstration of a monolithic silicon photonic (SiPh) 32×32 Thin-CLOS arrayed waveguide grating router (AWGR) for scalable SiPh all-to-all interconnection fabrics. The 32×32 Thin-CLOS makes use of four 16-port silicon nitride AWGRs, which are compactly integrated and interconnected by a multi-layer waveguide routing method. The fabricated Thin-CLOS has 4 dB insertion loss, < −15 dB adjacent channel crosstalk, and < −20 dB non-adjacent channel crosstalk. System experiments operated on the 32×32 SiPh Thin-CLOS demonstrate error-free communication at 25 Gb/s.

 
more » « less
PAR ID:
10411419
Author(s) / Creator(s):
; ; ; ;
Publisher / Repository:
Optical Society of America
Date Published:
Journal Name:
Optics Express
Volume:
31
Issue:
10
ISSN:
1094-4087; OPEXFF
Format(s):
Medium: X Size: Article No. 16623
Size(s):
Article No. 16623
Sponsoring Org:
National Science Foundation
More Like this
  1. We experimentally demonstrate a silicon photonic chip-scale 16-channel wavelength division multiplexer (WDM) operating in the O-band. The silicon photonic chip consists of a common-input bus waveguide integrated with a sequence of 16 spectral add-drop filters implemented by 4-port contra-directional Bragg couplers and resonant cladding modulated perturbations. The combination of these features reduces the spectral bandwidth of the filters and improves the crosstalk. An apodization of the cladding modulated perturbations between the bus and the add/drop waveguides is used to optimize the strength of the coupling coefficient in the propagation direction to reduce the intra-channel crosstalk on adjacent channels. The fabricated chip was validated experimentally with a measured intra-channel crosstalk of ∼−18.9 dB for a channel spacing of 2.6 nm. The multiplexer/demultiplexer chip was also experimentally tested with a 10 Gbps data waveform. The resulting eye-pattern indicates that this approach is suitable for datacenter WDM-based interconnects in the O-band with large aggregate bandwidths.

     
    more » « less
  2. We demonstrate an efficient silicon waveguide crossing based on the rapid adiabatic coupling (RAC) concept. Insertion loss and crosstalk are under 0.05 dB and -50 dB in simulation and under 0.3 dB and -17 dB in experiment across a 100 nm bandwidth. 
    more » « less
  3. We propose a nanogap-enhanced phase-change waveguide with silicon PIN heaters. Thanks to the enhanced light-matter interaction in the nanogap, the proposed structure exhibits strong attenuation (Δα = ∼35 dB/µm) and optical phase (Δneff = ∼1.2) modulation atλ =1550 nm when achieving complete phase transitions. We further investigate two active optical devices based on the proposed waveguide, including an electro-absorption modulator and a 1 × 2 directional-coupler optical switch. Finite-difference time-domain simulation of the proposed modulator shows a high extinction ratio of ∼17 dB at 1550 nm with an active segment of volume only ∼0.004λ3. By exploiting a directional coupler design, we present a 1 × 2 optical switch with an insertion loss of < 4 dB and a compact coupling length of ∼ 15 µm while maintaining small crosstalk less than −7.2 dB over an optical bandwidth of 50 nm. Thermal analysis shows that a 10 V pulse of 30 ns (1×1 modulator) and 55 ns (1×2 switch) in duration is required to raise the GST temperature of the phase-change waveguide above the melting temperature to induce the amorphization; however, the complete crystallization occurs by applying a 5 V pulse of 180 ns (1×1 modulator) and a 6 V pulse of 200 ns (1×2 switch), respectively.

     
    more » « less
  4. Abstract

    Terahertz (THz) communication is an up‐and‐coming technology for the sixth‐generation wireless network. The realization of ultra‐high‐speed THz communication requires the combination of multi‐dimensional multiplexing schemes, including polarization division multiplexing (PDM), mode division multiplexing (MDM), and wavelength division multiplexing, to increase channel capacity. However, most existing devices for MDM in the THz regime are single‐purpose and incapable of multi‐dimensional modulation. Here, all‐dielectric metasurfaces are designed for 2D multiplexing/demultiplexing, which takes the lead in combining orbital angular momentum (OAM) MDM and PDM in the THz regime. The multi‐functional wavefront phase modulations and interleaved meta‐atom arrangements are used to realize polarization‐selective multichannel OAM mode (de)multiplexing, in which the linear‐polarized 4‐channel and circular‐polarized 6‐channel demultiplexing are experimentally demonstrated. Between different linear‐polarized channels, the measured maximum crosstalk is −16.88 dB, and the isolation of each channel can be greater than 10 dB in a range wider than 0.1 THz. This study paves the way for multi‐dimensional multiplexing in the THz regime, which may benefit extremely high‐capacity and integrated THz communication systems. The proposed design strategy is readily applied to multi‐functional metasurfaces for microwaves and far infrared light, facilitating the development of multiplexing technology and OAM‐related applications.

     
    more » « less
  5. We design and experimentally demonstrate a polarizing beam splitter (PBS) on a silicon-on-insulator (SOI) platform based on an asymmetric directional coupler. The asymmetric directional coupler consists of a regular strip waveguide and a sub-wavelength grating (SWG) waveguide. Engineering the waveguide dispersion via SWG, the phase-matching condition can be satisfied for TM polarization over a broad bandwidth when the waveguide dimensions are optimized. The coupling region of the realized PBS is ∼7.2 µm long. For the fabricated PBS, the polarization extinction ratio (PER) is 10–45 dB and the insertion loss is 0.3–2.5 dB for TM polarization while the PER is 14–22 dB and the insertion loss is < 0.6 dB for TE polarization when operating in the wavelength range of 1460 –1610 nm.

     
    more » « less