Abstract M dwarfs are common host stars to exoplanets but often lack atmospheric abundance measurements. Late-M dwarfs are also good analogs to the youngest substellar companions, which share similarTeff∼ 2300–2800 K. We present atmospheric analyses for the M7.5 companion HIP 55507 B and its K6V primary star with Keck/KPIC high-resolution (R∼ 35,000)K-band spectroscopy. First, by including KPIC relative radial velocities between the primary and secondary in the orbit fit, we improve the dynamical mass precision by 60% and find , putting HIP 55507 B above the stellar–substellar boundary. We also find that HIP 55507 B orbits its K6V primary star with au ande= 0.40 ± 0.04. From atmospheric retrievals of HIP 55507 B, we measure [C/H] = 0.24 ± 0.13, [O/H] = 0.15 ± 0.13, and C/O = 0.67 ± 0.04. Moreover, we strongly detect13CO (7.8σsignificance) and tentatively detect (3.7σsignificance) in the companion’s atmosphere and measure and after accounting for systematic errors. From a simplified retrieval analysis of HIP 55507 A, we measure and for the primary star. These results demonstrate that HIP 55507 A and B have consistent12C/13C and16O/18O to the <1σlevel, as expected for a chemically homogeneous binary system. Given the similar flux ratios and separations between HIP 55507 AB and systems with young substellar companions, our results open the door to systematically measuring13CO and abundances in the atmospheres of substellar or even planetary-mass companions with similar spectral types.
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Heavy ion irradiation induced failure of gallium nitride high electron mobility transistors: effects of in-situ biasing
Abstract While radiation is known to degrade AlGaN/GaN high-electron-mobility transistors (HEMTs), the question remains on the extent of damage governed by the presence of an electrical field in the device. In this study, we induced displacement damage in HEMTs in both ON and OFF states by irradiating with 2.8 MeV Au4+ion to fluence levels ranging from to ions cm−2, or 0.001–2 displacement per atom (dpa). Electrical measurement is donein situ, and high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray (EDX), geometrical phase analysis (GPA), and micro-Raman are performed on the highest fluence of Au4+irradiated devices. The selected heavy ion irradiation causes cascade damage in the passivation, AlGaN, and GaN layers and at all associated interfaces. After just 0.1 dpa, the current density in the ON-mode device deteriorates by two orders of magnitude, whereas the OFF-mode device totally ceases to operate. Moreover, six orders of magnitude increase in leakage current and loss of gate control over the 2-dimensional electron gas channel are observed. GPA and Raman analysis reveal strain relaxation after a 2 dpa damage level in devices. Significant defects and intermixing of atoms near AlGaN/GaN interfaces and GaN layer are found from HRTEM and EDX analyses, which can substantially alter device characteristics and result in complete failure.
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- Award ID(s):
- 2015795
- PAR ID:
- 10412359
- Publisher / Repository:
- IOP Publishing
- Date Published:
- Journal Name:
- Journal of Physics D: Applied Physics
- Volume:
- 56
- Issue:
- 30
- ISSN:
- 0022-3727
- Page Range / eLocation ID:
- Article No. 305104
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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